ELEKTROBA AG electrical components, German ELEKTROBA AG models, ELEKTROBA AG prices

ELEKTROBA AG electrical components are parts of electronic components and small machines and instruments. They often consist of several parts and can be used interchangeably within similar products. The term commonly refers to certain parts in the electrical appliance, radio, and instrumentation industries, and is a general term for electronic devices such as capacitors, transistors, hairsprings, and mainsprings. Common examples include diodes. Electronic components include: resistors, capacitors, inductors, potentiometers, electron tubes, heat sinks, electromechanical components, connectors, discrete semiconductor devices, electroacoustic devices, laser devices, electronic display devices, optoelectronic devices, sensors, power supplies, switches, micro special motors, electronic transformers, relays, printed circuit boards, integrated circuits, various circuits, piezoelectric materials, crystals, quartz, ceramic magnetic materials, substrate boards for printed circuits, special materials for electronic functional processes, electronic adhesive (tape) products, electronic chemical materials and parts, etc.

ELEKTROBA AG electrical component parameters

1. Stable voltage refers to the stable voltage value generated across the terminals when the Zener diode passes the rated current. This value changes slightly with operating current and temperature. Due to differences in manufacturing processes, the stable voltage values of Zener diodes of the same model are not completely identical. 2. Reverse leakage current refers to the current passing through the Zener diode when it generates a stable voltage. Below this value, the Zener diode can still regulate voltage, but the regulation effect will be poorer; above this value, as long as the rated power dissipation is not exceeded, it is permissible, and the voltage regulation performance will be better, but it will consume more electrical energy. 3. Dynamic resistance refers to the ratio of the change in voltage across the Zener diode to the change in current. This ratio changes with the operating current; generally, the larger the operating current, the smaller the dynamic resistance. 4. Rated power dissipation is determined by the allowable temperature rise of the chip, and its value is the product of the stable voltage and the maximum allowable current. 5. Temperature coefficient: If the temperature of the Zener diode changes, its stable voltage will also undergo slight changes. The relative change in voltage across the tube caused by a temperature change of 1℃ is the temperature coefficient (unit: %/℃). Generally speaking, stable voltages below 6V belong to Zener breakdown, and the temperature coefficient is negative; the temperature coefficient is positive. When the temperature rises, the depletion layer decreases. In the depletion layer, the valence electrons of atoms rise to higher energy levels, and a smaller electric field strength can excite valence electrons from atoms to produce Zener breakdown, so its temperature coefficient is negative. Avalanche breakdown occurs when the depletion layer is wider and the electric field strength is lower. An increase in temperature increases the vibration amplitude of lattice atoms, hindering the movement of carriers. In this case, avalanche breakdown can only occur by increasing the reverse voltage, so the voltage temperature coefficient of avalanche breakdown is positive. For occasions with high requirements for power supplies, two Zener diodes with opposite temperature coefficients can be connected in series for compensation. Due to mutual compensation, the temperature coefficient is greatly reduced. 10. Reverse leakage current refers to the leakage current generated by the Zener diode under the specified reverse voltage.

ELEKTROBA AG electrical component classification

Ordinary power supplies can be subdivided into: switching power supplies, inverter power supplies, AC stabilized power supplies, DC stabilized power supplies, DC/DC power supplies, communication power supplies, module power supplies, variable frequency power supplies, UPS power supplies, EPS emergency power supplies, purification power supplies, PC power supplies, rectifier power supplies, custom power supplies, heating power supplies, welding power supplies/arc power supplies, electroplating power supplies, network power supplies, power operation power supplies, adapter power supplies, linear power supplies, power controllers/drivers, power power supplies, other ordinary power supplies, parameter power supplies, voltage-regulating power supplies, transformer power supplies. Special power supplies can be subdivided into: shore power supplies, security power supplies, high-voltage power supplies, medical power supplies, military power supplies, aerospace power supplies, laser power supplies, other special power supplies.

ELEKTROBA AG electrical component applications

The structure and characteristics of Schottky diodes make them suitable for high-frequency rectification in low-voltage, high-current output applications, for detection and mixing at very high frequencies (such as X band, C band, S band, and Ku band), and for clamping in high-speed logic circuits. In addition to the characteristic parameters of ordinary PN junction diodes, the electrical parameters of Schottky diodes used for detection and mixing also include intermediate frequency impedance, voltage standing wave ratio, and noise figure. Schottky barrier diodes are a type of low-power, ultra-high-speed semiconductor device. The most significant feature is the extremely short reverse recovery time (which can be as low as a few nanoseconds). They are mostly used as high-frequency, low-voltage, high-current rectifier diodes, freewheeling diodes, and protection diodes, and are also used as rectifier diodes and small-signal detection diodes in microwave communication circuits. They are relatively common in communication power supplies, frequency converters, etc. A typical application is in the switching circuit of a bipolar junction transistor BJT, where a Shockley diode is connected to the BJT for clamping, so that the transistor is actually close to the cutoff state when in the conduction state, thereby improving the switching speed of the transistor. The main feature of Schottky diodes is the smaller forward voltage drop. Under the same current conditions, their forward voltage drop is much smaller. In addition, their recovery time is short. They also have some disadvantages: lower withstand voltage and slightly larger leakage current. Comprehensive consideration is required when selecting.

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