ERKO electrical components Germany ERKO model ERKO price

ERKO electrical component is a pyroelectric infrared sensor, a device constructed from thermocouples. It is widely used as a temperature detection device in fields such as ear thermometers, radiation thermometers, electric ovens, and food temperature testing. The entry details the basic unit of a thermopile—the thermocouple; and provides a detailed introduction to the structure, working principle, main parameters, and applications of thermopiles.

ERKO electrical component parameters

1. Nominal varistor voltage: refers to the voltage value across the varistor when a pulse current of specified duration passes through. 2. Voltage ratio: refers to the ratio of the voltage value generated by the current of the varistor to the voltage value generated by the current of the varistor. 3. Maximum clamping voltage: the peak voltage across the varistor under the maximum pulse peak current Ip that the varistor can withstand and under a specified waveform. 4. Residual voltage ratio: when the current passing through the varistor is a certain value, the voltage generated across it is called the residual voltage for this current value. The residual voltage ratio is the ratio of residual voltage to nominal voltage. 5. Surge current capacity: Surge current capacity, also known as surge current, refers to the maximum pulse current value allowed to pass through the varistor under specified conditions. 6. Leakage current: Leakage current, also known as standby current, refers to the current flowing through the varistor when the varistor is at a specified temperature and maximum DC voltage. 7. Voltage temperature coefficient: refers to the rate of change of the nominal voltage of the varistor within a specified temperature range, i.e., the relative change in voltage across the varistor when the temperature changes while the current passing through the varistor remains constant. 8. Current temperature coefficient: refers to the relative change in current flowing through the varistor when the temperature changes while the voltage across the varistor remains constant. 9. Voltage nonlinearity coefficient: refers to the ratio of the static resistance value to the dynamic resistance value of the varistor under a given applied voltage. 10. Insulation resistance: refers to the resistance value between the lead wires of the varistor and the insulating surface of the resistor body. 11. Static capacitance: refers to the inherent capacitive capacity of the varistor itself. 12. Rated power: the maximum power that causes a change in varistor voltage when operating at a specific ambient temperature. 13. Maximum impulse current: the maximum impulse current that causes a change in varistor voltage when the varistor is impacted by a specific pulse current once or twice.

ERKO electrical component principle

The construction of a mercury switch is very simple. The outside is a sealed cylindrical insulating housing containing about one-fifth mercury. Two wires leading out from the inside are fixed at one end of the housing. This constitutes a mercury switch. Due to gravity, the mercury bead flows to the lower part of the container; if it contacts both electrodes simultaneously, the switch closes the circuit, turning the switch on. The shape of the container also affects the conditions under which the mercury bead contacts the electrodes.

ERKO electrical component structure

The structure and materials of new high-voltage Schottky diodes differ from those of traditional Schottky diodes. Traditional Schottky diodes are formed by metal-semiconductor contact. Metal materials such as aluminum, gold, molybdenum, nickel, and titanium can be selected, and the semiconductor is typically silicon or gallium arsenide. Since electrons have higher mobility than holes, to achieve good frequency characteristics, N type semiconductor material is selected as the substrate. To reduce the junction capacitance of the Schottky diode and increase the reverse breakdown voltage without making the series resistance too large, a high-resistance N- thin layer is usually epitaxially grown on an N+ substrate. As is well known, there are a large number of conductive electrons inside a metal conductor. When metal contacts semiconductor (with the distance between them only on the order of atomic size), the Fermi level of the metal is lower than the Fermi level of the semiconductor. In the metal and the sub-levels corresponding to the semiconductor conduction band, the electron density is less than the electron density of the semiconductor conduction band. Therefore, after contact, electrons diffuse from the semiconductor to the metal, causing the metal to become negatively charged and the semiconductor positively charged. Since metal is an ideal conductor, negative charge is distributed only within a thin layer on the surface with atomic thickness. For N type semiconductors, donor impurity atoms that lose electrons become positive ions and are distributed over a larger thickness. The result of electron diffusion from the semiconductor to the metal forms a space charge region, a built-in electric field, and a barrier, with the depletion layer existing only on the N type semiconductor side (the entire barrier region falls on the semiconductor side). The direction of the built-in electric field in the barrier region points from the N type region to the metal. As thermionic emission increases the built-in field, the drift current opposite to the diffusion current increases, finally reaching dynamic equilibrium and forming a contact barrier between the metal and the semiconductor, known as the Schottky barrier. When the external voltage is zero, the electron diffusion current equals the reverse drift current, achieving dynamic equilibrium. When forward bias is applied (i.e., positive voltage to the metal, negative voltage to the semiconductor), the built-in field weakens, the barrier on the semiconductor side lowers, forming a forward current from metal to semiconductor. When reverse bias is applied, the built-in field strengthens, the barrier height increases, forming a smaller reverse current from semiconductor to metal. Therefore, like SBD and PN junction diodes, it is a nonlinear device with unidirectional conductivity.

Weidou Intelligent Technology professionally sells German ERKO connectors, ERKO switches, ERKO relays, ERKO controllers, ERKO plugs, ERKO sensors, ERKO resistors, ERKO capacitors, ERKO buses, ERKO modules, ERKO cables, ERKO power supplies, ERKO interfaces, ERKO gateways, ERKO circuit breakers, ERKO original imports from Germany. Welcome customers to inquire and order.