Finmotor electrical components Germany Finmotor model Finmotor price

Finmotor electrical components are electronic devices with conductivity between that of good conductors and insulators, utilizing the special electrical properties of semiconductor materials to perform specific functions. They can be used to generate, control, receive, transform, and amplify signals, as well as perform energy conversion. The semiconductor materials for semiconductor devices are silicon, germanium, or gallium arsenide, which can be used as rectifiers, oscillators, light emitters, amplifiers, photodetectors, and other equipment. To distinguish them from integrated circuits, they are sometimes referred to as discrete devices. The basic structure of most two-terminal devices (i.e., crystal diodes) is a PN junction. Semiconductor devices typically utilize different semiconductor materials, processes, and geometric structures, resulting in a wide variety of crystal diodes with diverse functions and applications. The frequency coverage of crystal diodes ranges from low frequency, high frequency, microwave, millimeter wave, infrared, up to light waves. Three-terminal devices are generally active devices, with typical representatives being various transistors (also known as bipolar junction transistors). Transistors can be divided into bipolar transistors and field-effect transistors. Depending on the application, transistors can be classified into power transistors, microwave transistors, and low-noise transistors. In addition to general-purpose transistors used for amplification, oscillation, and switching, there are transistors for special purposes, such as phototransistors, magnetically sensitive transistors, and field-effect sensors. These devices can convert information about environmental factors into electrical signals and also provide amplification like general transistors to obtain larger output signals. Furthermore, there are other special devices, such as unijunction transistors that can be used to generate sawtooth waves, thyristors that can be used for various high-current control circuits, and charge-coupled devices that can be used as imaging devices or information storage devices. In military equipment such as communication and radar systems, weak signals are mainly received by highly sensitive, low-noise semiconductor receiving devices. With the rapid development of microwave communication technology, low-noise microwave semiconductor devices have developed rapidly, with increasing operating frequencies and decreasing noise figures. Due to their excellent performance, small size, light weight, and low power consumption, microwave semiconductor devices have been widely used in air defense and anti-missile systems, electronic warfare systems, and other applications.

Finmotor electrical component parameters

The main parameters of transistors include current amplification factor, dissipated power, frequency characteristics, maximum collector current, maximum reverse voltage, and reverse current. Amplification factor: The DC current amplification factor, also known as the static current amplification factor or DC amplification ratio, refers to the ratio of the transistor collector current to the base current when there is no changing signal input in the static state. AC amplification factor: The AC amplification factor, also known as the AC current amplification factor or dynamic current amplification factor, refers to the ratio of the change in transistor collector current to the change in base current under AC conditions. Dissipated power: Dissipated power, also known as the maximum allowable collector dissipated power PCM, refers to the maximum collector dissipated power when the transistor parameters do not exceed the specified allowable values. Dissipated power is closely related to the maximum allowable junction temperature and the maximum collector current of the transistor. During use, the actual power consumption of the transistor must not exceed the PCM value; otherwise, the transistor will be damaged due to overload. When the operating frequency of the transistor exceeds the cutoff frequency, its current amplification factor will decrease as the frequency increases. The maximum oscillation frequency refers to the frequency at which the power gain of the transistor drops to 10. Typically, the maximum oscillation frequency of high-frequency transistors is lower than the common-base cutoff frequency, while the characteristic frequency is higher than the common-base cutoff frequency and lower than the common-collector cutoff frequency. Maximum current: The maximum collector current refers to the maximum current allowed to pass through the transistor collector. Maximum reverse voltage: The maximum reverse voltage refers to the highest working voltage allowed to be applied to the transistor during operation. It includes the collector-emitter reverse breakdown voltage, collector-base reverse breakdown voltage, and emitter-base reverse breakdown voltage. The collector reverse breakdown voltage refers to the maximum allowable reverse voltage between the collector and emitter when the transistor base is open. The base reverse breakdown voltage refers to the maximum allowable reverse voltage between the collector and base when the transistor emitter is open. The emitter reverse breakdown voltage refers to the maximum allowable reverse voltage between the emitter and base when the transistor collector is open. The reverse current between the base and collector, also known as the collector junction reverse leakage current, refers to the reverse current between the collector and base when the transistor emitter is open. The reverse breakdown current between the emitter and collector refers to the reverse leakage current between the collector and emitter when the transistor base is open, also known as the penetration current. The smaller this current value, the better the performance of the transistor.

Finmotor electrical component parameters

1. Nominal varistor voltage: refers to the voltage value across the varistor when a pulse current of specified duration passes through it. 2. Voltage ratio: refers to the ratio of the voltage value generated by the current in the varistor to the voltage value generated by the current in the varistor. 3. Maximum limiting voltage: the peak voltage across the varistor under the maximum pulse peak current Ip that the varistor can withstand and under the specified waveform. 4. Residual voltage ratio: when the current passing through the varistor is a certain value, the voltage generated across it is called the residual voltage for that current value. The residual voltage ratio is the ratio of the residual voltage to the nominal voltage. 5. Surge current capacity: Surge current capacity, also known as surge current, refers to the maximum pulse current value allowed to pass through the varistor under specified conditions. 6. Leakage current: Leakage current, also known as standby current, refers to the current flowing through the varistor at the specified temperature and maximum DC voltage. 7. Voltage temperature coefficient: refers to the rate of change of the nominal voltage of the varistor within the specified temperature range, i.e., the relative change in voltage across the varistor when the temperature changes while the current passing through the varistor remains constant. 8. Current temperature coefficient: refers to the relative change in the current flowing through the varistor when the temperature changes while the voltage across the varistor remains constant. 9. Voltage nonlinearity coefficient: refers to the ratio of the static resistance value to the dynamic resistance value of the varistor under a given applied voltage. 10. Insulation resistance: refers to the resistance value between the lead wires of the varistor and the insulated surface of the resistive body. 11. Static capacitance: refers to the inherent capacitance of the varistor itself. 12. Rated power: the maximum power that causes a change in varistor voltage when operating at a specific ambient temperature. 18. Maximum impulse current: the maximum impulse current that causes a change in varistor voltage when the varistor is subjected to a specific pulse current impact once or twice.

Finmotor electrical component principle

The forward characteristic of the volt-ampere characteristic curve of a Zener diode is similar to that of a standard diode. In the reverse characteristic, when the reverse voltage is below the reverse breakdown voltage, the reverse resistance is very high, and the reverse leakage current is extremely small. However, when the reverse voltage approaches the critical value of the reverse voltage, the reverse current increases suddenly, which is called breakdown. At this critical breakdown point, the reverse resistance drops suddenly to a very small value. Although the current changes over a wide range, the voltage across the diode remains basically stable near the breakdown voltage, thereby achieving the voltage regulation function of the diode.

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