FUNKER HUSTER electrical components Germany FUNKER HUSTER models FUNKER HUSTER prices

FUNKER HUSTER electrical components are Schottky barrier diodes named after their inventor, Dr. Schottky. Schottky barrier diodes are not made using the principle of forming a PN junction by contact between P-type and N-type semiconductors, but rather using the principle of a metal-semiconductor junction formed by contact between metal and semiconductor. Therefore, Schottky barrier diodes are also called metal-semiconductor (contact) diodes or surface barrier diodes; they are a type of hot-carrier diode.

FUNKER HUSTER electrical component parameters

The main parameters of transistors include current amplification factor, dissipation power, frequency characteristics, maximum collector current, maximum reverse voltage, and reverse current. Amplification factor: The DC current amplification factor, also known as the static current amplification factor or DC amplification ratio, refers to the ratio of the transistor's collector current to its base current when there is no changing signal input under static conditions. AC amplification factor: The AC amplification factor, i.e., the AC current amplification factor or dynamic current amplification factor, refers to the ratio of the change in the transistor's collector current to the change in its base current under AC conditions. Dissipation power: Dissipation power, also known as the maximum allowable collector dissipation power PCM, refers to the maximum collector dissipation power when changes in transistor parameters do not exceed specified allowable values. Dissipation power is closely related to the transistor's maximum allowable junction temperature and maximum collector current. During use, the actual power consumption of the transistor must not exceed the PCM value; otherwise, the transistor will be damaged due to overload. When the operating frequency of the transistor exceeds the cutoff frequency, its current amplification factor will decrease as the frequency increases. The maximum oscillation frequency refers to the frequency at which the transistor's power gain drops to 12. Typically, the maximum oscillation frequency of high-frequency transistors is lower than the common-base cutoff frequency, while the characteristic frequency is higher than the common-base cutoff frequency and lower than the common-collector cutoff frequency. Maximum current: The maximum collector current refers to the maximum current allowed to pass through the transistor's collector. Maximum reverse voltage: The maximum reverse voltage refers to the highest operating voltage allowed to be applied to the transistor during operation. It includes the collector-emitter reverse breakdown voltage, collector-base reverse breakdown voltage, and emitter-base reverse breakdown voltage. Collector reverse breakdown voltage refers to the maximum allowable reverse voltage between the collector and emitter when the transistor's base is open. Base reverse breakdown voltage refers to the maximum allowable reverse voltage between the collector and base when the transistor's emitter is open. Emitter reverse breakdown voltage refers to the maximum allowable reverse voltage between the emitter and base when the transistor's collector is open. The reverse current between the bases, also known as the collector junction reverse leakage current, refers to the reverse current between the collector and base when the transistor's emitter is open. The reverse breakdown current between the emitters refers to the reverse leakage current between the collector and emitter when the transistor's base is open, also known as the penetration current. The smaller this current value, the better the performance of the transistor.

FUNKER HUSTER electrical component structure

Some gas discharge tubes use glass as the tube enclosure, while others use ceramic as the enclosure. The discharge tube is filled with inert gases with stable electrical properties (such as argon and neon). Common discharge tubes typically have two or three discharge electrodes, separated by inert gas. Based on the number of electrodes, discharge tubes can be classified into two-electrode and three-electrode discharge tubes. Ceramic two-electrode discharge tubes consist mainly of pure iron electrodes, nickel-chromium-cobalt alloy caps, silver-copper welding caps, and ceramic tube bodies. The discharge electrodes inside the tube are coated with radioactive oxides, and the inner wall of the tube is also coated with radioactive elements to improve discharge characteristics. Discharge electrodes mainly come in rod-shaped and cup-shaped structures. In discharge tubes with rod-shaped electrodes, a cylindrical heat shield is installed between the electrode and the tube wall. This heat shield helps distribute heat evenly across the ceramic tube body, preventing local overheating that could cause the tube to crack. The heat shield is also coated with radioactive oxides to further reduce discharge dispersion. In discharge tubes with cup-shaped electrodes, a molybdenum mesh is installed at the cup opening, and cesium is placed inside the cup, also serving to reduce discharge dispersion. Three-electrode discharge tubes are also composed of pure iron electrodes, nickel-chromium-cobalt alloy caps, silver-copper welding caps, and ceramic tube bodies. Unlike two-electrode discharge tubes, three-electrode discharge tubes include an additional nickel-chromium-cobalt alloy cylinder as the third electrode, i.e., the ground electrode.

FUNKER HUSTER electrical component classification

1. Classified by structure into three major categories: fixed capacitors, variable capacitors, and trimmer capacitors. 2. Classified by dielectric: organic dielectric capacitors, inorganic dielectric capacitors, electrolytic capacitors, electric heating capacitors, and air dielectric capacitors. 3. Classified by application: high-frequency bypass capacitors, low-frequency bypass capacitors, filter capacitors, tuning capacitors, high-frequency coupling capacitors, low-frequency coupling capacitors, and small capacitors. 4. Classified by manufacturing material: ceramic capacitors, polyester capacitors, electrolytic capacitors, tantalum capacitors, and advanced polypropylene capacitors. 5. High-frequency bypass: ceramic capacitors, mica capacitors, glass film capacitors, polyester capacitors, and glass glaze capacitors. 6. Low-frequency bypass: paper dielectric capacitors, ceramic capacitors, aluminum electrolytic capacitors, and polyester capacitors. 7, filtering: aluminum electrolytic capacitors, paper dielectric capacitors, composite paper dielectric capacitors, and liquid tantalum capacitors. 8. Tuning: ceramic capacitors, mica capacitors, glass film capacitors, and polystyrene capacitors. 9. Low coupling: paper dielectric capacitors, ceramic capacitors, aluminum electrolytic capacitors, polyester capacitors, and solid tantalum capacitors. 11. Small capacitors: metallized paper dielectric capacitors, ceramic capacitors, aluminum electrolytic capacitors, polystyrene capacitors, solid tantalum capacitors, glass glaze capacitors, metallized polyester capacitors, polypropylene capacitors, and mica capacitors.

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