GREENLUX electrical components Germany GREENLUX model GREENLUX price

GREENLUX electrical component is an electronic device with three terminals, made of three parts of semiconductors with different doping levels. The charge flow in the transistor is mainly due to the diffusion and drift movement of carriers at the PN junction. The operation of this transistor involves the flow of both electrons and holes, so it is called bipolar, also known as a bipolar junction transistor. This mode of operation differs from unipolar transistors such as field-effect transistors, whose operation involves only the drift of one type of carrier. The boundary between two regions with different dopants is formed by the PN junction. Bipolar transistors can amplify signals and have good power control, high-speed operation, and durability, so they are often used to form amplifier circuits or drive devices such as speakers and motors, and are widely used in aerospace engineering, medical devices, robotics, and other applications.

GREENLUX electrical component structure

The structure and materials of new high-voltage Schottky diodes differ from those of traditional Schottky diodes. Traditional Schottky diodes are formed by metal-semiconductor contact. Metals such as aluminum, gold, molybdenum, nickel, and titanium can be used, while the semiconductor is typically silicon or gallium arsenide. Since electrons have higher mobility than holes, N-type semiconductor material is selected as the substrate to achieve good frequency characteristics. To reduce the junction capacitance of the Schottky diode and increase the reverse breakdown voltage without causing excessive series resistance, a high-resistance N- thin layer is usually epitaxially grown on an N+ substrate. It is well known that there are many conductive electrons inside a metal conductor. When metal contacts a semiconductor (with a distance on the order of atomic size), the Fermi level of the metal is lower than that of the semiconductor. At the sub-levels corresponding to the conduction band of the semiconductor inside the metal, the electron density is lower than that in the conduction band of the semiconductor. Therefore, after contact, electrons diffuse from the semiconductor to the metal, causing the metal to become negatively charged and the semiconductor positively charged. Since metal is an ideal conductor, negative charge is distributed only within a thin layer on the surface with atomic thickness. For N-type semiconductors, donor impurity atoms that lose electrons become positive ions and are distributed over a larger thickness. The result of electron diffusion from the semiconductor to the metal forms a space charge region, a built-in electric field, and a barrier, with the depletion layer existing only on the N-type semiconductor side (the entire barrier region falls on the semiconductor side). The direction of the built-in electric field in the barrier region points from the N-type region to the metal. As thermionic emission increases the built-in field, the drift current opposite to the diffusion current increases, finally reaching dynamic equilibrium and forming a contact barrier between the metal and the semiconductor, known as the Schottky barrier. When the external voltage is zero, the electron diffusion current equals the reverse drift current, achieving dynamic equilibrium. When forward bias is applied (positive voltage to the metal, negative voltage to the semiconductor), the built-in field weakens, the barrier on the semiconductor side lowers, and a forward current flows from the metal to the semiconductor. When reverse bias is applied, the built-in field strengthens, the barrier height increases, and a small reverse current flows from the semiconductor to the metal. Therefore, SBD, like PN junction diodes, is a nonlinear device with unidirectional conductivity.

GREENLUX electrical component principle

A resistor consists of three parts: the resistive element, the skeleton, and the leads (for solid-core resistors, the resistive element and skeleton are combined into one), but only the resistive element determines the resistance value. The volt-ampere characteristic is represented by a graphical curve showing the relationship between voltage and current at the resistor terminals. When voltage and current are proportional (linear characteristic), it is called a linear resistor; otherwise, it is called a nonlinear resistor. The maximum power dissipation allowed for continuous operation of the resistor at the rated temperature (maximum ambient temperature) tR. For each resistor, a maximum working voltage is also specified; that is, even if the rated power is not reached, the maximum working voltage must not be exceeded when the resistance is high. The rated power of a resistor refers to the maximum power allowed to be consumed during long-term continuous operation in DC or AC circuits. Load characteristics: When the ambient temperature is below tR, the resistor must not exceed its rated power; when exceeding tR, the load power must be reduced. Each resistor has specified load characteristics. In addition, the allowable load decreases under low pressure. Under pulse load, the average pulse power is much lower than the rated power, and separate specifications usually apply.

GREENLUX electrical component principle

In addition to the function of a photodiode, which converts optical signals into electrical signals, a phototransistor also provides electrical signal amplification. The appearance of a phototransistor is not significantly different from that of a conventional transistor. Typically, only two terminals are brought out—the emitter and the collector—while the base terminal is not brought out. The package also features a window to allow light to enter. To increase light exposure, the base region is made large, while the emitter region is small; incident light is primarily absorbed by the base region. During operation, the collector junction is reverse-biased, and the emitter junction is forward-biased. In the absence of light, the current flowing through the device is the dark current Iceo = (1 + β) Icbo (very small), which is even smaller than the leakage current of a conventional transistor. When illuminated, a large number of electron-hole pairs are generated, causing the base current Ib to increase. The current flowing through the device at this time is called the photocurrent, and the emitter current Ie = (4 + β) Ib. Thus, it is evident that a phototransistor offers higher sensitivity than a photodiode.

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