GRUNER electrical components Germany GRUNER model GRUNER price

GRUNER electrical components are devices that convert alternating current into direct current, and can be used in power supply units and for detecting radio signals, among other applications. Rectifiers can be made from vacuum tubes, ignitrons, solid-state silicon semiconductor diodes, mercury arcs, etc. Conversely, a device that converts direct current into alternating current is called an "inverter". In standby UPS systems, only battery charging is required without supplying power to the load, so only a charger is present. In double-conversion UPS systems, this device supplies power to the inverter and also charges the battery, hence it is called a rectifier/charger. A rectifier is a rectifying device; simply put, it is a device that converts AC to DC. It has two main functions: first, to convert AC to DC, which is then filtered and supplied to the load or to the inverter; second, to provide charging voltage to the battery. Therefore, it also serves as a charger.

GRUNER electrical component structure

The structure and materials of new high-voltage Schottky diodes differ from those of traditional Schottky diodes. Traditional Schottky diodes are formed by metal-semiconductor contact. Metals such as aluminum, gold, molybdenum, nickel, and titanium can be used, while the semiconductor is typically silicon or gallium arsenide. Since electrons have higher mobility than holes, N-type semiconductor material is selected as the substrate to achieve good frequency characteristics. To reduce the junction capacitance of the Schottky diode and increase the reverse breakdown voltage without causing excessive series resistance, a high-resistance N- thin layer is usually epitaxially grown on an N+ substrate. As is well known, there are abundant conductive electrons inside metal conductors. When metal contacts a semiconductor (with a separation distance on the order of atomic size), the Fermi level of the metal is lower than that of the semiconductor. At the energy levels corresponding to the conduction band of the semiconductor within the metal, the electron density is lower than that in the semiconductor's conduction band. Therefore, upon contact, electrons diffuse from the semiconductor to the metal, causing the metal to become negatively charged and the semiconductor positively charged. Since metal is an ideal conductor, the negative charge is distributed only within a surface layer of atomic thickness. For N-type semiconductors, the donor impurity atoms that lose electrons become positive ions and are distributed over a greater thickness. The result of electron diffusion from the semiconductor to the metal is the formation of a space charge region, a built-in electric field, and a potential barrier, with the depletion layer located only on the N-type semiconductor side (the entire barrier region falls on the semiconductor side). The direction of the built-in electric field in the barrier region points from the N-type region toward the metal. As thermionic emission increases the built-in field, the drift current, which opposes the diffusion current, increases until dynamic equilibrium is reached, forming a contact potential barrier between the metal and the semiconductor, known as the Schottky barrier. When the external voltage is zero, the electron diffusion current equals the reverse drift current, achieving dynamic equilibrium. When forward bias is applied (positive voltage to the metal, negative voltage to the semiconductor), the built-in field is weakened, the barrier on the semiconductor side is lowered, and a forward current flows from the metal to the semiconductor. When reverse bias is applied, the built-in field strengthens, the barrier height increases, and a small reverse current flows from the semiconductor to the metal. Therefore, like a SBD-PN junction diode, it is a nonlinear device with unidirectional conductivity.

GRUNER electrical component requirements

1, copper and aluminum rods commonly used for power cords are drawn through one or more drawing dies at room temperature using a wire drawing machine, reducing their cross-section, increasing their length, and improving their strength. Wire drawing is the first process in wire and cable manufacturing, and the key process parameter is die matching. 2, copper and aluminum single wires are heated to a certain temperature to improve toughness and reduce strength through recrystallization, meeting the requirements for conductive cores in wires and cables. The key to the annealing process is to prevent oxidation of the copper wires. 3, to improve the flexibility of power cords for easier installation, the conductive core is composed of stranded single wires. Stranding methods can be classified into regular stranding and irregular stranding. Irregular stranding includes bunch stranding, concentric composite stranding, and special stranding. To reduce the occupied area of the conductor and the geometric size of the power cord, compacted stranding is often used during conductor stranding, changing the usual circular shape into semi-circular, sectoral, tile-shaped, and compacted circular shapes. This type of conductor is mainly used in power cords. 4, plastic power cords mainly use extruded solid insulation layers. The tolerance of the insulation thickness is an important indicator of the extrusion process quality. Most product structures and their tolerances are clearly specified in standards. The surface of the plastic insulation layer must be smooth, free from roughness, scorching, or impurities. The cross-section of the insulation layer must be dense and robust, with no visible pinholes or bubbles. 5, multi-core power cords are generally stranded into a circular shape to ensure form stability and reduce the overall size. The stranding mechanism is similar to conductor stranding, but due to the larger lay length, non-back-twist methods are mostly used. Cable laying requirements include: preventing twisted insulation cores from flipping and causing cable torsion, and avoiding damage to the insulation layer. During cable laying, two other processes are usually completed simultaneously: filling, to ensure the roundness and stability of the cable after laying, and binding, to keep the cable core tight. 6, to protect the insulated cores from being damaged by armor, appropriate protection is applied to the insulation layer. Inner sheaths are divided into extruded inner sheaths (separator sleeves) and wrapped inner sheaths (cushioning layers). Wrapped cushioning layers replace binding tapes and are applied synchronously with the cable laying process. 7, for underground power cords that may withstand certain positive pressure during operation, an inner steel tape armor structure can be selected. For power cords installed in locations subject to both positive pressure and tensile forces (such as in water, vertical shafts, or soil with significant elevation differences), a structure with inner steel wire armor should be selected. 12, the outer sheath is the structural part that protects the insulation layer of the power cord from environmental corrosion. The main functions of the outer sheath are to improve the mechanical strength of the power cord, resist chemical corrosion, prevent moisture, prevent water ingress, and inhibit combustion. Depending on the specific requirements for the power cord, plastic sheaths are directly extruded using an extruder.

GRUNER electrical component principle

It mainly consists of an LC circuit composed of capacitors and inductors, producing free oscillation through the mutual conversion of electric field energy and magnetic field energy. To sustain oscillation, an amplifier circuit with positive feedback is required. LC oscillators are further divided into transformer-coupled and three-point oscillators. Many applications use quartz crystal oscillators, and there are also LC oscillators composed of integrated operational amplifiers. Since component parameters cannot be perfectly identical, the states of the two transistors change at the moment of power-up. This change becomes increasingly intense due to positive feedback, leading to a quasi-stable state. During the quasi-stable period, the other transistor gradually charges or discharges through the capacitor, causing its state to flip and reaching another quasi-stable state. This cycle repeats to form oscillation.

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