harting electrical components Germany harting model harting price

harting electrical components utilize the good conductivity and fluidity of mercury to control the opening and closing of electrical circuits. They consist of a glass tube, mercury, fixed electrodes, lead wires, etc. After evacuating the air from the tube, it is filled with various gases and sealed. It is suitable for environments with dust, oil, water vapor, and corrosive gases, and can also be used as an explosion-proof switch in places with explosive gases. Given the high surface tension and specific gravity of the mercury inside the tube, along with its fluidity, the position of the mercury changes immediately with even a slight tilt of the glass tube, and contacts the electrodes via surface contact, thus enabling the switching of high AC and DC currents. Additionally, this type of switch features a service life of several million cycles at rated current, small size, high sensitivity, no mechanical noise, and low cost, so it has always been used as a switch for automatic control.

harting electrical component principle

The alternating current generated by the automotive alternator is converted into direct current by the rectifier, but its waveform still has irregular fluctuations, which directly affects the accuracy of vehicle ignition; the output voltage cannot remain relatively constant, causing differences in the energy of each spark plug ignition, which easily causes engine jitter, gear shift hesitation, slow and weak acceleration, unstable idle speed, and low efficiency of the car air conditioner. This greatly reduces the performance and service life of onboard electrical equipment; coupled with the aging of the circuit system in older cars and the increase in circuit impedance, the impact on the vehicle becomes increasingly obvious. The role of the electronic rectifier is to help the car eliminate clutter interference, stabilize the output voltage, improve the instantaneous discharge capability of the power system, increase torque output, accelerate throttle response, extend battery life, shorten engine start time, and improve ignition efficiency, especially for small-displacement cars, where the effect is more obvious. When a semiconductor PN junction is forward-biased, the current is large; when reverse-biased, the current is small. A rectifier diode is a PN junction diode that utilizes this unidirectional conductivity characteristic of the PN junction to convert alternating current into direct current. Devices with a current capacity below 1 amperes are usually called rectifier diodes, while those above 10 amperes are called rectifiers. Common semiconductor rectifiers include silicon rectifiers and selenium rectifiers, with many product specifications, voltages ranging from tens of volts to thousands of volts, and currents from a few amperes to thousands of amperes. Rectifiers are widely used in various forms of rectified power supplies. High-power rectified power supplies require rectifiers with large current capacity, high breakdown voltage, and good heat dissipation performance, but such devices have large junction areas and large junction capacitance, resulting in very low operating frequencies, generally below tens of kilohertz. Silicon material has a larger bandgap width and good thermal conductivity, making it suitable for manufacturing high-power rectifier devices. High-voltage silicon stacks are often used in high-voltage rectification devices; they consist of multiple rectifier device cores connected in series, and their reverse withstand voltage is determined by the withstand voltage of the cores and the number of series-connected cores, with a maximum withstand voltage reaching hundreds of kilovolts. If a high-frequency rectifier circuit is used at very high frequencies, when the period of the AC voltage is comparable to the recovery time of the rectifier from the on-state to the off-state, the rectifier no longer performs rectification on the high-frequency voltage. To adapt to high-frequency operation, gold doping is usually employed in silicon rectifiers to shorten the lifetime of injected minority carriers, thereby reducing the recovery time. To reduce the possibility of device damage due to overvoltage breakdown and improve the reliability of the rectification device, silicon avalanche rectifiers can be used. In such devices, when the reverse voltage exceeds the allowable peak value, uniform avalanche breakdown occurs across the entire PN junction, allowing the device to operate under high voltage and large current, thus withstanding considerable reverse surge power. Manufacturing such devices requires materials with few defects, uniform resistivity, and flat junction surfaces; the exposed junction area should also be properly protected to avoid surface breakdown. Selenium rectifiers have large overload capacity and strong ability to withstand reverse surge power. In the two basic types of rectifiers based on high-power diodes or thyristors, the high-voltage AC power from the grid is converted into DC power by the rectifier.

harting electrical component principle

It mainly consists of an LC circuit composed of capacitors and inductors, producing free oscillation through the mutual conversion of electric field energy and magnetic field energy. To maintain oscillation, an amplifier circuit with positive feedback is required. LC oscillators are divided into transformer-coupled oscillators and three-point oscillators. Many applications use quartz crystal oscillators, and there are also LC oscillators composed of integrated operational amplifiers. Since device parameters cannot be completely identical, the states of the two transistors change at the moment of power-on. This change becomes increasingly intense due to positive feedback, leading to a quasi-stable state. During the quasi-stable state, the other transistor gradually charges through the capacitor and then conducts or cuts off, causing the state to flip and reach another quasi-stable state. This cycle repeats to form oscillation.

harting electrical component composition

A diode is formed by a PN junction plus corresponding electrode leads and package casing. Using different doping processes and diffusion, P-type semiconductor and N-type semiconductor are fabricated on the same semiconductor substrate (usually silicon or germanium), forming a space charge region at their interface called the PN junction. The electrode led out from the P region is called the anode, and the electrode led out from the N region is called the cathode. Due to the unidirectional conductivity of the PN junction, when the diode is conducting, the current flows from the anode through the interior of the tube to the cathode. A diode has two electrodes: the electrode led out from the P region is the positive terminal, also called the anode; the electrode led out from the N region is the negative terminal, also called the cathode.

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