HELLERMANN TYTON electrical components Germany HELLERMANN TYTON models HELLERMANN TYTON prices

HELLERMANN TYTON electrical components are current-limiting elements. When a resistor is connected in a circuit, its resistance is fixed, typically with two pins, limiting the current through the branch it is connected to. Resistors with unchangeable resistance are called fixed resistors. Those with variable resistance are called potentiometers or variable resistors. An ideal resistor is linear, meaning the instantaneous current through it is proportional to the applied instantaneous voltage. Variable resistors used for voltage division have one or two movable metal contacts pressed tightly against the exposed resistive body. The contact position determines the resistance between either end of the resistive body and the contact. It is a two-terminal device where terminal voltage and current have a definite functional relationship, reflecting the ability to convert electrical energy into other forms, represented by the letter R, with the unit Ohm Ω. Actual devices such as light bulbs, heating wires, and resistors can all be represented as resistor components. The resistance value is generally related to temperature, material, length, and cross-sectional area. The physical quantity measuring the effect of temperature on resistance is the temperature coefficient, defined as the percentage change in resistance when the temperature rises by 1 ℃. The main physical characteristic of a resistor is converting electrical energy into thermal energy; it is also known as a dissipative element, generating internal energy as current passes through it. Resistors typically serve voltage division and current shunting roles in circuits. For signals, both AC and DC signals can pass through resistors.

HELLERMANN TYTON electrical component structure

The structure and materials of new high-voltage Schottky diodes differ from traditional Schottky diodes. Traditional Schottky diodes are formed by metal-semiconductor contact. Metal materials can include aluminum, gold, molybdenum, nickel, and titanium, while the semiconductor is typically silicon or gallium arsenide. Since electrons have higher mobility than holes, to achieve good frequency characteristics, N type semiconductor material is selected as the substrate. To reduce the junction capacitance of the Schottky diode and increase the reverse breakdown voltage without making the series resistance too large, a high-resistance N- thin layer is usually epitaxially grown on an N+ substrate. As is well known, there are many conductive electrons inside metal conductors. When metal contacts a semiconductor (with a distance on the order of atomic size), the Fermi level of the metal is lower than that of the semiconductor. At the sub-levels corresponding to the conduction band of the semiconductor inside the metal, the electron density is lower than that in the semiconductor conduction band. Therefore, after contact, electrons diffuse from the semiconductor to the metal, causing the metal to become negatively charged and the semiconductor positively charged. Since metal is an ideal conductor, negative charge is distributed only within a surface layer of atomic thickness. For N type semiconductors, donor impurity atoms that lose electrons become positive ions, distributed over a larger thickness. The result of electron diffusion from the semiconductor to the metal forms a space charge region, a built-in electric field, and a barrier, with the depletion layer existing only on the N type semiconductor side (the entire barrier region falls on the semiconductor side). The direction of the built-in electric field in the barrier region points from the N type region to the metal. As thermionic emission increases the built-in field, the drift current opposite to the diffusion current increases, finally reaching dynamic equilibrium and forming a contact barrier between the metal and semiconductor, known as the Schottky barrier. When the external voltage is zero, the electron diffusion current equals the reverse drift current, achieving dynamic equilibrium. When forward bias is applied (positive voltage to metal, negative to semiconductor), the built-in field weakens, the barrier on the semiconductor side lowers, forming a forward current from metal to semiconductor. When reverse bias is applied, the built-in field strengthens, the barrier height increases, forming a small reverse current from semiconductor to metal. Therefore, SBD, like a PN junction diode, is a nonlinear device with unidirectional conductivity.

HELLERMANN TYTON electrical component principle

The working principle of a discharge tube is gas gap discharge i. When a certain voltage is applied between the two poles of the discharge tube, a non-uniform electric field is generated between the poles: under this electric field, the gas inside the tube begins to ionize. When the external voltage increases to the point where the field strength between the poles exceeds the insulation strength of the gas, the gap between the poles breaks down and discharges, transforming from an insulating state to a conducting state. After conduction, the voltage between the two poles of the discharge tube is maintained at the residual voltage level determined by the discharge arc channel. This residual voltage is generally very low, thereby protecting electronic equipment connected in parallel with the discharge tube from overvoltage damage.

HELLERMANN TYTON electrical component characteristics

① Volt-ampere characteristics: When a forward voltage is applied to a diode, the current is extremely small when the voltage value is low; when the voltage exceeds a certain value, the current begins to increase exponentially, commonly referred to as the turn-on voltage of the diode, at which point the diode is in a fully conducting state, commonly referred to as the conduction voltage. For germanium diodes, when a reverse voltage is applied, the current is extremely small when the voltage value is low, known as the reverse saturation current. When the reverse voltage exceeds a certain value, the current increases sharply, known as reverse breakdown, and this voltage is called the reverse breakdown voltage of the diode. The breakdown voltage values vary significantly among different diode models, ranging from tens of volts to thousands of volts. ② Forward characteristics: When a forward voltage is applied, in the initial part of the forward characteristic, the forward voltage is very small and insufficient to overcome the blocking effect of the internal electric field of the PN junction, so the forward current is almost zero; this section is called the dead zone. This forward voltage that cannot make the diode conduct is called the dead zone voltage. When the forward voltage is greater than the dead zone voltage, the internal electric field of the PN junction is overcome, the diode conducts forward, and the current rises rapidly with increasing voltage. Within the normal operating current range, the terminal voltage of the diode during conduction remains almost constant, known as the forward voltage of the diode. When the forward voltage across the diode exceeds a certain value, the internal electric field is quickly weakened, the characteristic current grows rapidly, and the diode conducts forward; this is called the threshold voltage or cut-in voltage. ③ Reverse characteristics: When the applied reverse voltage does not exceed a certain range, the current through the diode is a reverse current formed by the drift motion of minority carriers. Since the reverse current is very small, the diode is in a cutoff state. This reverse current is also called reverse saturation current or leakage current, and it is greatly affected by temperature. Generally, the reverse current of silicon tubes is much smaller than that of germanium tubes; the reverse saturation current of low-power silicon tubes is in the order of nA, while that of low-power germanium tubes is in the order of μA. When the temperature rises, the semiconductor is thermally excited, the number of minority carriers increases, and the reverse saturation current also increases. ④ Breakdown characteristics: When the applied reverse voltage exceeds a certain value, the reverse current suddenly increases, a phenomenon known as electrical breakdown. The critical voltage causing electrical breakdown is called the diode reverse breakdown voltage. During electrical breakdown, the diode loses its unidirectional conductivity. If the diode does not overheat due to electrical breakdown, the unidirectional conductivity may not be permanently destroyed, and its performance can recover after removing the external voltage; otherwise, the diode is damaged. Therefore, excessive reverse voltage should be avoided during use. Reverse breakdown is divided into Zener breakdown and avalanche breakdown based on mechanism. In cases of high doping concentration, because the barrier region width is very small, a large reverse voltage destroys the covalent bond structure within the barrier region, freeing valence electrons from covalent bonds and generating electron-hole pairs, causing a sharp increase in current; this is called Zener breakdown. If the doping concentration is low, the barrier region is wider, and Zener breakdown is less likely to occur. Another type is avalanche breakdown. When the reverse voltage increases to a large value, the external electric field accelerates electron drift speed, causing collisions with valence electrons in covalent bonds, knocking them out and generating new electron-hole pairs. The newly generated electron-hole pairs are accelerated by the electric field and knock out other valence electrons, leading to an avalanche increase in carriers and a sharp increase in current; this is called avalanche breakdown. Regardless of the type of breakdown, if the current is not limited, it may cause permanent damage to the PN junction. ⑤ Reverse current: Reverse current refers to the current flowing through the diode at room temperature and under maximum reverse voltage. The smaller the reverse current, the better the unidirectional conductivity of the tube. It is worth noting that reverse current is closely related to temperature; it doubles with temperature increase. Therefore, silicon diodes have better stability at high temperatures than germanium diodes. ⑥ Dynamic resistance: The ratio of the change in voltage to the corresponding change in current near the static operating point of the diode characteristic curve. ⑦ Voltage temperature coefficient: The voltage temperature coefficient refers to the relative change in stable voltage for every one degree Celsius increase in temperature. ⑧ Maximum operating frequency: The maximum operating frequency is the upper limit frequency for diode operation. Since the diode, like a PN junction, has junction capacitance composed of barrier capacitance, the maximum operating frequency mainly depends on the size of the PN junction capacitance. If this value is exceeded, unidirectional conductivity will be affected. ⑨ Maximum rectified current: Maximum rectified current refers to the maximum allowable forward average current value when the diode operates continuously for a long period. Its value is related to the PN junction area and external heat dissipation conditions. Because current passing through the tube causes the core to heat up and the temperature to rise, exceeding the permissible limit will cause the core to overheat and fail. Therefore, under specified heat dissipation conditions, the diode should not exceed its maximum rectified current value during use.⑩ Maximum reverse working voltage: When the reverse voltage applied across the diode reaches a certain high value, the tube will break down and lose its unidirectional conductivity. To ensure safe operation, a maximum reverse working voltage value is specified.

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