klauke electrical components Germany klauke model klauke price

klauke electrical components are Schottky barrier diodes named after their inventor, Dr. Schottky. Schottky barrier diodes are not made using the principle of forming a PN junction by contact between P-type semiconductor and N-type semiconductor, but rather using the principle of a metal-semiconductor junction formed by contact between metal and semiconductor. Therefore, Schottky barrier diodes are also called metal-semiconductor (contact) diodes or surface barrier diodes; they are a type of hot-carrier diode.

klauke electrical components classification

Printed circuit boards are divided into three major categories based on the number of layers: single-sided boards, double-sided boards, and multi-layer boards. First is the single-sided board, where components are concentrated on one side and traces on the other side of the basic PCB. Because traces appear only on one side, this type of PCB is called a single-sided printed circuit board. Single-sided boards are typically simple to manufacture and low in cost, but their disadvantage is that they cannot be applied to overly complex products. Double-sided boards are an extension of single-sided boards; when single-layer routing cannot meet the needs of electronic products, double-sided boards must be used. Both sides have copper cladding and traces, and vias can be used to conduct circuits between the two layers, forming the required network connections. Multi-layer boards refer to printed circuit boards formed by laminating more than three conductive graphic layers with insulating materials in between, with the conductive graphics interconnected as required. Multi-layer printed circuit boards are the product of the development of electronic information technology towards high speed, multi-functionality, large capacity, small volume, thin profile, and lightweight. Based on characteristics, printed circuit boards are divided into flexible boards (FPC), rigid boards (PCB), and rigid-flex boards (FPCB).

klauke electrical components principle

In addition to the function of converting optical signals into electrical signals like photodiodes, phototransistors also have the function of amplifying electrical signals. The appearance of a phototransistor is not much different from that of a general transistor. Generally, a phototransistor has only two leads—the emitter and the collector—with the base not led out. The casing also has a window to allow light to enter. To increase light exposure, the base region area is made very large, while the emitter region is smaller, so incident light is mainly absorbed by the base region. During operation, the collector junction is reverse-biased, and the emitter junction is forward-biased. In the absence of light, the current flowing through the tube is the dark current Iceo = (1 + β) Icbo (very small), which is smaller than the penetration current of general transistors; when there is light illumination, a large number of electron-hole pairs are excited, causing the current generated at the base Ib to increase. At this moment, the current flowing through the tube is called photocurrent, and the emitter current Ie = (3 + β) Ib. It can be seen that phototransistors have higher sensitivity than photodiodes.

klauke electrical components principle

Schottky diodes are metal-semiconductor devices made using noble metals (gold, silver, aluminum, platinum, etc.) A as the anode and N-type semiconductor B as the cathode, utilizing the rectifying characteristics of the barrier formed at their contact surface. Because there are a large number of electrons in the N-type semiconductor and only a very small number of free electrons in the noble metal, electrons diffuse from the high-concentration B to the low-concentration A. Obviously, there are no holes in the metal A, so there is no diffusion movement of holes from A to B. As electrons continuously diffuse from B to A, the electron concentration on the surface of B gradually decreases, destroying surface electrical neutrality, thus forming a barrier whose electric field direction is B → A. However, under the action of this electric field, electrons in A also produce a drift movement from A → B, thereby weakening the electric field formed by the diffusion movement. After a space charge region of a certain width is established, the electron drift movement caused by the electric field and the electron diffusion movement caused by the concentration difference reach a relative balance, forming the Schottky barrier. The internal circuit structure of a typical Schottky rectifier uses N-type semiconductor as the substrate, on which an N-epitaxial layer doped with arsenic is formed. The anode uses materials such as molybdenum or aluminum to form a barrier layer. Silicon dioxide is used to eliminate the electric field in the edge region, improving the voltage withstand value of the tube. The N-type substrate has a very small on-state resistance, and its doping concentration is 102% times higher than that of the H-layer. An N+ cathode layer is formed under the substrate to reduce the contact resistance of the cathode. By adjusting structural parameters, a Schottky barrier is formed between the N-type substrate and the anode metal.

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