klauke electrical components Germany klauke models klauke prices

klauke electrical components are Schottky barrier diodes named after their inventor, Dr. Schottky. Schottky barrier diodes are not made using the principle of forming a PN junction by contact between P-type semiconductor and N-type semiconductor, but rather using the principle of a metal-semiconductor junction formed by contact between metal and semiconductor. Therefore, Schottky barrier diodes are also called metal-semiconductor (contact) diodes or surface barrier diodes; they are a type of hot-carrier diode.

klauke electrical components classification

Printed circuit boards are divided into three major categories according to the number of layers: single-sided boards, double-sided boards, and multi-layer boards. First, the single-sided board: on the most basic PCB, components are concentrated on one side, while conductors are concentrated on the other side. Because conductors appear only on one side, this type of PCB is called a single-sided printed circuit board. Single-sided boards are usually simple to manufacture and low in cost, but their disadvantage is that they cannot be applied to overly complex products. Double-sided boards are an extension of single-sided boards; when single-layer routing cannot meet the needs of electronic products, double-sided boards must be used. Both sides have copper cladding and traces, and vias can be used to conduct circuits between the two layers, forming the required network connections. Multi-layer boards refer to printed circuit boards formed by laminating more than three layers of conductive graphic layers with insulating materials in between, with the conductive graphics interconnected as required. Multi-layer printed circuit boards are the product of the development of electronic information technology towards high speed, multi-functionality, large capacity, small volume, thin profile, and light weight. Printed circuit boards are divided according to characteristics into flexible boards (FPC), rigid boards (PCB), and rigid-flex boards (FPCB).

klauke electrical components principle

In addition to the function of a photodiode, which converts optical signals into electrical signals, a phototransistor also provides electrical signal amplification. The appearance of a phototransistor is not significantly different from that of a conventional transistor. Typically, only two terminals are brought out—the emitter and the collector—while the base terminal is not brought out. The package also features a window to allow light to enter. To increase light exposure, the base region is made large, while the emitter region is small; incident light is primarily absorbed by the base region. During operation, the collector junction is reverse-biased, and the emitter junction is forward-biased. In the absence of light, the current flowing through the device is the dark current Iceo = (1 + β) Icbo (very small), which is even smaller than the leakage current of a conventional transistor. When illuminated, a large number of electron-hole pairs are generated, causing the base-generated current Ib to increase. The current flowing through the device at this time is called the photocurrent, and the emitter current Ie = (3 + β) Ib. Thus, it can be seen that a phototransistor has higher sensitivity than a photodiode.

klauke electrical components principle

Schottky diodes are metal-semiconductor devices made using noble metals (gold, silver, aluminum, platinum, etc.) A as the anode and N-type semiconductor B as the cathode, utilizing the rectifying characteristics of the barrier formed at their contact surface. Because there are a large number of electrons in the N-type semiconductor and only a very small number of free electrons in the noble metal, electrons diffuse from the high-concentration B to the low-concentration A. Obviously, there are no holes in the metal A, so there is no diffusion movement of holes from A to B. As electrons continuously diffuse from B to A, the electron concentration on the surface of B gradually decreases, destroying surface electrical neutrality, thus forming a barrier whose electric field direction is B → A. However, under the action of this electric field, electrons in A also produce a drift motion from A → B, thereby weakening the electric field formed by the diffusion motion. After a space charge region of a certain width is established, the electron drift motion caused by the electric field and the electron diffusion motion caused by the concentration difference reach a relative balance, forming the Schottky barrier. The internal circuit structure of a typical Schottky rectifier uses N-type semiconductor as the substrate, on which an N-epitaxial layer doped with arsenic is formed. The anode uses materials such as molybdenum or aluminum to form a barrier layer. Silicon dioxide is used to eliminate the electric field in the edge region, improving the voltage resistance of the tube. The N-type substrate has a very small on-state resistance, and its doping concentration is 102% times higher than that of the H-layer. An N+ cathode layer is formed under the substrate to reduce the contact resistance of the cathode. By adjusting structural parameters, a Schottky barrier is formed between the N-type substrate and the anode metal.

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