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lapp zubehoer electrical component is a photodetector that converts light into current or voltage signals depending on the mode of use. The die often uses a PN junction with photosensitive characteristics, which is very sensitive to changes in light, has unidirectional conductivity, and changes its electrical properties when the light intensity varies; therefore, the current in the circuit can be changed by varying the light intensity. Photodiodes are also called photoelectric diodes. Photodiodes are similar in structure to semiconductor diodes; their die is a PN junction with photosensitive characteristics and has unidirectional conductivity, so a reverse voltage must be applied during operation. When there is no illumination, there is a very small saturated reverse leakage current, i.e., dark current, and the photodiode is cut off. When illuminated, the saturated reverse leakage current increases significantly, forming a photocurrent that varies with the intensity of the incident light. When light irradiates the PN junction, electron-hole pairs are generated in the PN junction, increasing the density of minority carriers. These carriers drift under reverse voltage, causing the reverse current to increase. Therefore, the current in the circuit can be changed by varying the light intensity.

lapp zubehoer electrical component principle

Its working principle is the same as that of a transformer, and its basic structure consists of an iron core and primary and secondary windings. It is characterized by a very small and relatively constant capacity, operating close to no-load conditions during normal operation. The impedance of the voltage transformer itself is very small; once a short circuit occurs on the secondary side, the current will increase sharply and burn out the coil. For this reason, the primary side of the voltage transformer is equipped with a fuse, and the secondary side is reliably grounded to prevent high potential to ground on the secondary side in case of insulation damage between the primary and secondary sides, which could cause personal injury and equipment accidents. Voltage transformers for measurement are generally made with a single-phase double-winding structure. The primary voltage is the voltage to be measured (such as the line voltage of the power system), which can be used in single phase or two units can be connected in V-V configuration for three-phase use. Voltage transformers used in laboratories often have multiple taps on the primary side to meet the needs of measuring different voltages. Voltage transformers for protective grounding also have a third winding, known as a three-winding voltage transformer. The third windings of the three phases are connected in an open-delta configuration, and the two terminals of the open delta are connected to the voltage coil of the ground protection relay. During normal operation, the three-phase voltages of the power system are symmetrical, and the sum of the three-phase induced electromotive forces on the third winding is zero. Once a single-phase ground fault occurs, the neutral point shifts, and zero-sequence voltage appears between the terminals of the open delta, causing the relay to operate and thus protecting the power system. If zero-sequence voltage appears in the winding, zero-sequence flux will appear in the corresponding iron core. For this reason, this type of three-phase voltage transformer uses a side-yoke iron core or three single-phase voltage transformers. For this type of transformer, the accuracy requirement for the third winding is not high, but it requires certain over-excitation characteristics (i.e., when the primary voltage increases, the magnetic flux density in the iron core increases by a corresponding factor without damage). Voltage transformers are indispensable electrical appliances in power transmission and supply systems such as power plants and substations. Precision voltage transformers are instruments used in electrical testing laboratories to expand measurement ranges and measure voltage, power, and energy. Voltage transformers are very similar to transformers; both are used to transform voltage on lines. Why is voltage transformation needed on lines? This is because, depending on the different conditions of generation, transmission, and consumption, the voltage on the lines varies greatly, with some being low voltage 220V and 385V, and others being high voltage tens of thousands or even hundreds of thousands of volts. To directly measure these low and high voltages, corresponding low-voltage and high-voltage voltmeters and other instruments and relays would need to be manufactured according to the line voltage magnitude. This would not only bring great difficulties to instrument manufacturing, but more importantly, it is impossible and absolutely prohibited to directly manufacture high-voltage instruments and measure voltage directly on high-voltage lines.

lapp zubehoer electrical component applications

Light-emitting diodes are widely used in many fields. The following are some of their main applications: (1) Applications in electronic products: Light-emitting diodes are generally used in electronic products as backlight sources or for display and lighting applications. From large LCD TVs and computer screens to media players MP3, MP4, and mobile phone screens, light-emitting diodes are used as backlight sources. (2) Applications in automobiles and large machinery: Light-emitting diodes are widely used in automobiles and large machinery. Turn signals, interior lighting, instrument lighting, headlights, turn indicators, brake lights, tail lights, etc., in automobiles and large mechanical equipment all use light-emitting diodes. This is mainly because light-emitting diodes have fast response times and long service lives (generally, the life of a light-emitting diode is longer than that of automobiles and large machinery). (3) Applications in coal mines: Because light-emitting diodes have higher efficiency, lower energy consumption, longer life, and higher luminous intensity compared to ordinary light-emitting devices, miner's lamps and underground lighting equipment use light-emitting diodes. Although not yet fully popularized, they will be widely used in the near future, and light-emitting diodes will replace ordinary light-emitting devices in coal mine applications. (14) Urban decorative lights: In today's prosperous commercial era, neon lights are an important symbol of urban prosperity, but neon lights have many disadvantages, such as insufficient lifespan. Therefore, replacing neon lights with light-emitting diodes has many advantages, because compared to neon lights, light-emitting diodes not only have a longer lifespan but also offer energy savings, simple drive and control, and maintenance-free operation. Replacing neon lights with light-emitting diodes is the inevitable result of the development of lighting equipment.

lapp zubehoer electrical component principle

NPN type bipolar transistors can be viewed as two diodes joined together with a common anode. In the normal operating state of a bipolar transistor, the base-emitter junction is forward-biased, while the base-collector junction is reverse-biased. When no external voltage is applied, the electron concentration in the N region of the emitter junction is greater than that in the P region, and some electrons will diffuse into the P region. Similarly, some holes in the P region will also diffuse into the N region. In this way, a space charge region forms on the emitter junction, generating an internal electric field directed from the N region to the P region. This electric field hinders the further occurrence of the above diffusion process, thereby achieving dynamic equilibrium. At this point, if a forward voltage is applied to the emitter junction, the dynamic balance between the carrier diffusion motion and the internal electric field in the depletion layer will be broken, causing thermally excited electrons to inject into the base region. In NPN type transistors, the base region is P type doped, where holes are the majority dopants, so electrons in this region are called "minority carriers." Electrons injected from the emitter into the base region partly recombine with the majority carriers (holes) here. On the other hand, due to the low doping level and thin physical dimensions of the base region, and because the collector junction is reverse-biased, most electrons will reach the collector region through drift motion, forming the collector current. To alleviate electron recombination before reaching the collector junction as much as possible, the base region of the transistor must be made thin enough so that the time required for carrier diffusion is shorter than the lifetime of semiconductor minority carriers, and the base thickness must be much smaller than the electron diffusion length. In modern bipolar transistors, the typical value of the base region thickness is a few tenths of a micron. It should be noted that although both the collector and emitter are N type doped, their doping levels and physical properties are not the same, so bipolar transistors must be distinguished from the form of two diodes connected in series in opposite directions.

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