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marquardt electrical components are surge absorbers/varistor assemblies. Due to their nonlinear resistance change with voltage, they exhibit symmetry in both directions (positive and negative). They respond to abnormal voltages on the line, absorbing most of the surge/spike energy while suppressing the abnormal voltage to a safe range, thereby improving line safety and stability. In standby mode, surge absorbers (varistors) have very high impedance (several megaohms) relative to the protected electronic components and do not affect the characteristics of the original circuit design. However, when an instantaneous surge voltage appears (exceeding the breakdown voltage of the surge absorber), the impedance of the surge absorber drops low (only a few ohms), causing a short circuit in the line, thus protecting electronic products or more expensive components.

marquardt electrical component operating principle

Bipolar junction transistors are divided into two types by material: germanium transistors and silicon transistors. Each type has two structural forms: NPN and PNP. The most commonly used are silicon NPN transistors and germanium PNP transistors. (Here, N stands for negative; N-type semiconductors are formed by adding phosphorus to high-purity silicon to replace some silicon atoms, generating free electrons for conduction under voltage stimulation. P stands for positive, meaning boron is added to replace silicon, creating a large number of holes to facilitate conduction.) Apart from different power supply polarities, their working principles are identical. The following introduces only the current amplification principle of NPN silicon transistors. An NPN transistor consists of 10 pieces of N-type semiconductor sandwiching one piece of P-type semiconductor. The PN junction formed between the emitter region and the base region is called the emitter junction, and the PN junction formed between the collector region and the base region is called the collector junction. The three leads are called the emitter e, base b, and collector c. When the potential at point b is a fraction of a volt higher than the potential at point e, the emitter junction is forward-biased. When the potential at point C is several volts higher than the potential at point b, the collector junction is reverse-biased, and the collector power supply Ec must be higher than the base power supply Eb. During transistor manufacturing, the majority carrier concentration in the emitter region is intentionally made higher than that in the base region. The base region is made very thin, and impurity content is strictly controlled. Thus, once power is applied, due to the forward bias of the emitter junction, the majority carriers in the emitter region (electrons) and the majority carriers in the base region (holes) easily diffuse across the emitter junction toward each other. However, since the former concentration is much greater than the latter, the current through the emitter junction is basically an electron flow, known as the emitter electron current.

marquardt electrical component characteristics

Sensitivity refers to the ratio of the change in output to the change in input of a sensor under steady-state operating conditions. It is the slope of the output-input characteristic curve. If there is a linear relationship between the sensor's output and input, then sensitivity S is a constant. Otherwise, it varies with changes in the input quantity. The dimension of sensitivity is the ratio of the dimensions of the output and input quantities. When the dimensions of the sensor's output and input quantities are the same, sensitivity can be understood as the amplification factor. Increasing sensitivity yields higher measurement accuracy. However, the higher the sensitivity, the narrower the measurement range, and often the poorer the stability.

marquardt electrical component classification

a. By material: silicon transistors, germanium transistors. b. By structure: NPN, PNP. c. By function: switching transistors, power transistors, Darlington transistors, photosensitive transistors, etc. d. By power: low-power transistors, medium-power transistors, high-power transistors. e. By operating frequency: low-frequency transistors, high-frequency transistors, ultra-high-frequency transistors. f. By structural process: alloy transistors, planar transistors. g. By mounting method: through-hole transistors, surface-mount transistors.

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