Morgan Rekofa electrical components German Morgan Rekofa models Morgan Rekofa prices

Morgan Rekofa electrical components utilize the good conductivity and fluidity of mercury to control the opening and closing of electrical circuits. They consist of a glass tube, mercury, fixed electrodes, lead wires, etc. After evacuating the air from the tube, it is filled with various gases and sealed. They are suitable for environments with dust, oil, water vapor, and corrosive gases, and can also be used as explosion-proof switches in places with explosive gases. Given the high surface tension and specific gravity of the mercury inside the tube, as well as its fluidity, even a slight tilt of the glass tube causes the position of the mercury to change immediately, making contact with the electrodes via surface contact, thus enabling the switching of high AC and DC currents. Additionally, this type of switch features a lifespan of several million cycles at rated current, small size, high sensitivity, no mechanical noise, and low price, so it has always been used as a switch for automatic control.

Morgan Rekofa electrical component classification

Printed circuit boards are broadly classified into single-sided boards, double-sided boards, and multi-layer boards based on the number of layers. First, the single-sided board: on the most basic PCB, components are concentrated on one side, while conductors are concentrated on the other. Since conductors appear only on one side, this type of PCB is called a single-sided printed circuit board. Single-sided boards are typically simple to manufacture and low in cost, but their disadvantage is that they cannot be applied to overly complex products. Double-sided boards are an extension of single-sided boards; when single-layer routing cannot meet the needs of electronic products, double-sided boards are used. Both sides have copper cladding and traces, and vias can be used to connect circuits between the two layers, forming the required network connections. Multi-layer boards refer to printed boards with more than three conductive graphic layers separated by insulating materials through lamination, with interconnections between the conductive graphics made as required. Multi-layer printed circuit boards are the product of the development of electronic information technology towards high speed, multi-functionality, large capacity, small volume, thin profile, and light weight. Based on characteristics, printed circuit boards are divided into flexible boards (FPC), rigid boards (PCB), and rigid-flex boards (FPCB).

Morgan Rekofa electrical component principles

The working principle of a discharge tube is gas gap discharge i. When a certain voltage is applied between the two poles of the discharge tube, a non-uniform electric field is generated between the poles: under the action of this electric field, the gas inside the tube begins to ionize. When the external voltage increases to the point where the field strength between the poles exceeds the insulation strength of the gas, the gap between the two poles will discharge and break down, transforming from an original insulating state to a conductive state. After conduction, the voltage between the two poles of the discharge tube is maintained at the residual voltage level determined by the discharge arc channel. This residual voltage is generally very low, thereby protecting electronic equipment connected in parallel with the discharge tube from overvoltage damage.

Morgan Rekofa electrical component parameters

The main parameters of transistors include current amplification factor, power dissipation, frequency characteristics, maximum collector current, maximum reverse voltage, and reverse current. Amplification factor: The DC current amplification factor, also known as the static current amplification factor or DC amplification ratio, refers to the ratio of the transistor's collector current to the base current when there is no changing signal input in the static state. AC amplification factor: The AC amplification factor, i.e., the AC current amplification factor or dynamic current amplification factor, refers to the ratio of the change in the transistor's collector current to the change in base current under AC conditions. Power dissipation: Power dissipation, also known as the maximum allowable collector power dissipation PCM, refers to the maximum collector power dissipation when the transistor parameters do not exceed the specified allowable values. Power dissipation is closely related to the transistor's maximum allowable junction temperature and maximum collector current. During use, the actual power consumption of the transistor must not exceed the PCM value, otherwise, the transistor will be damaged due to overload. When the operating frequency of the transistor exceeds the cutoff frequency, its current amplification factor will decrease as the frequency increases. The maximum oscillation frequency refers to the frequency at which the transistor's power gain drops to 1. Typically, the maximum oscillation frequency of high-frequency transistors is lower than the common-base cutoff frequency, while the characteristic frequency is higher than the common-base cutoff frequency and lower than the common-collector cutoff frequency. Maximum current: The maximum collector current refers to the maximum current allowed to pass through the transistor's collector. Maximum reverse voltage: The maximum reverse voltage refers to the highest operating voltage allowed to be applied to the transistor during operation. It includes the collector-emitter reverse breakdown voltage, collector-base reverse breakdown voltage, and emitter-base reverse breakdown voltage. The collector reverse breakdown voltage refers to the maximum allowable reverse voltage between the collector and emitter when the transistor base is open. The base reverse breakdown voltage refers to the maximum allowable reverse voltage between the collector and base when the transistor emitter is open. The emitter reverse breakdown voltage refers to the maximum allowable reverse voltage between the emitter and base when the transistor collector is open. The reverse current between the bases, also known as the collector junction reverse leakage current, refers to the reverse current between the collector and base when the transistor emitter is open. The reverse breakdown current between the emitters refers to the reverse leakage current between the collector and emitter when the transistor base is open, also known as the penetration current. The smaller this current value, the better the performance of the transistor.

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