NEUTRIK electrical components Germany NEUTRIK model NEUTRIK price

NEUTRIK electrical components are one of the earliest devices for amplifying electrical signals. The cathode electron emission part, control grid, accelerating grid, and anode (plate) leads, enclosed in a glass container (usually a glass tube), are welded to the tube base. An electric field is used to modulate the signal by injecting electrons into the control grid in a vacuum, and different parameter signal data after signal amplification or feedback oscillation are obtained at the anode. Early applications included electronic products such as televisions, radios, and amplifiers. Later, they were gradually replaced by amplifiers and integrated circuits made from semiconductor materials, but in some high-fidelity audio equipment, vacuum tubes with low noise and high stability coefficients are still used as audio power amplification devices (in Hong Kong, vacuum tube power amplifiers are referred to as "tube amps").

NEUTRIK electrical component characteristics

(1) Volt-ampere characteristics: When a forward voltage is applied to a diode, the current is extremely small when the voltage value is low; when the voltage exceeds a certain value, the current begins to increase exponentially. This is usually called the turn-on voltage of the diode. When the diode is in a fully conductive state, this voltage is usually called the conduction voltage of the diode. For germanium diodes, when a reverse voltage is applied to the diode, the current is extremely small when the voltage value is low, and its current value is the reverse saturation current. When the reverse voltage exceeds a certain value, the current increases sharply, which is called reverse breakdown, and this voltage is called the reverse breakdown voltage of the diode. The breakdown voltage values of different diode models vary greatly, ranging from tens of volts to thousands of volts. (2) Forward characteristics: When a forward voltage is applied, in the initial part of the forward characteristics, the forward voltage is very small and insufficient to overcome the blocking effect of the electric field within the PN junction, so the forward current is almost zero. This section is called the dead zone. The forward voltage that cannot make the diode conduct is called the dead zone voltage. When the forward voltage is greater than the dead zone voltage, the electric field within the PN junction is overcome, the diode conducts in the forward direction, and the current rises rapidly as the voltage increases. Within the normal operating current range, the terminal voltage of the diode remains almost constant during conduction; this voltage is called the forward voltage of the diode. When the forward voltage across the diode exceeds a certain value, the internal electric field is quickly weakened, the characteristic current grows rapidly, and the diode conducts in the forward direction. This is called the threshold voltage or cut-in voltage. (3) Reverse characteristics: When the applied reverse voltage does not exceed a certain range, the current through the diode is a reverse current formed by the drift motion of minority carriers. Since the reverse current is very small, the diode is in the cutoff state. This reverse current is also called reverse saturation current or leakage current. The reverse saturation current of a diode is greatly affected by temperature. Generally, the reverse current of silicon tubes is much smaller than that of germanium tubes. The reverse saturation current of low-power silicon tubes is in the order of nA, and that of low-power germanium tubes is in the order of μA. When the temperature rises, the semiconductor is heated and excited, the number of minority carriers increases, and the reverse saturation current also increases. (4) Breakdown characteristics: When the applied reverse voltage exceeds a certain value, the reverse current suddenly increases. This phenomenon is called electrical breakdown. The critical voltage causing electrical breakdown is called the diode reverse breakdown voltage. During electrical breakdown, the diode loses its unidirectional conductivity. If the diode does not overheat due to electrical breakdown, the unidirectional conductivity is not necessarily permanently destroyed. After removing the applied voltage, its performance can still recover; otherwise, the diode is damaged. Therefore, excessive reverse voltage applied to the diode should be avoided during use. Reverse breakdown is divided into two types based on mechanism: Zener breakdown and avalanche breakdown. In cases of high doping concentration, because the width of the barrier region is very small, a large reverse voltage destroys the covalent bond structure within the barrier region, causing valence electrons to break free from covalent bonds and generate electron-hole pairs, resulting in a sharp increase in current. This breakdown is called Zener breakdown. If the doping concentration is low, the barrier region is wider, and Zener breakdown is less likely to occur. Another type of breakdown is avalanche breakdown. When the reverse voltage increases to a large value, the external electric field accelerates the electron drift speed, causing collisions with valence electrons in covalent bonds, knocking valence electrons out of covalent bonds and generating new electron-hole pairs. The newly generated electron-hole pairs are accelerated by the electric field and knock out other valence electrons, causing an avalanche-like increase in carriers and a sharp increase in current. This breakdown is called avalanche breakdown. Regardless of the type of breakdown, if the current is not limited, it may cause permanent damage to the PN junction. (5) Reverse current: Reverse current refers to the current flowing through the diode when it is at room temperature and under the maximum reverse voltage. The smaller the reverse current, the better the unidirectional conductivity of the tube. It is worth noting that reverse current is closely related to temperature; the reverse current doubles. Therefore, silicon diodes have better stability at high temperatures than germanium diodes. (6) Dynamic resistance: The ratio of the change in voltage to the corresponding change in current near the static operating point of the diode characteristic curve. (7) Voltage temperature coefficient: The voltage temperature coefficient refers to the relative change in stable voltage for every one degree Celsius increase in temperature. (8) Maximum operating frequency: The maximum operating frequency is the upper limit frequency for diode operation. Like the PN junction, the diode's junction capacitance consists of barrier capacitance. Therefore, the value of the maximum operating frequency mainly depends on the size of the PN junction capacitance. If this value is exceeded, the unidirectional conductivity will be affected. (9) Maximum rectified current: Maximum rectified current refers to the maximum allowable forward average current value when the diode operates continuously for a long period. Its value is related to the PN junction area and external heat dissipation conditions. Because current passing through the tube causes the core to heat up and the temperature to rise, exceeding the permissible limit will cause the core to overheat and become damaged. Therefore, under specified heat dissipation conditions, the diode should not exceed its maximum rectified current value during use.(10) Maximum reverse working voltage: When the reverse voltage applied across the diode reaches a certain high value, the tube will break down and lose its unidirectional conductivity. To ensure safe operation, the maximum reverse working voltage value is specified.

NEUTRIK electrical component parameters

(1) Rated operating voltage: Refers to the voltage required by the coil for the relay to operate normally. Depending on the relay model, it can be AC voltage or DC voltage. (2) DC resistance: Refers to the DC resistance of the coil in the relay, which can be measured with a multimeter. (3) Pull-in current: Refers to the minimum current required for the relay to perform the pull-in action. During normal use, the supplied current must be slightly greater than the pull-in current so that the relay can work stably. For the operating voltage applied to the coil, it generally should not exceed the rated operating voltage; otherwise, a large current will be generated, burning out the coil. (4) Release current: Refers to the maximum current at which the relay performs the release action. When the current in the pull-in state of the relay decreases to a certain level, the relay returns to the de-energized release state. At this time, the current is much smaller than the pull-in current. (5) Contact switching voltage and current: Refers to the voltage and current that the relay is allowed to handle. It determines the magnitude of voltage and current that the relay can control. This value must not be exceeded during use; otherwise, the relay contacts are easily damaged.

NEUTRIK electrical component principle

In addition to having the function of converting optical signals into electrical signals like photodiodes, phototransistors also have the function of amplifying electrical signals. The appearance of a phototransistor is not much different from that of a general transistor. Generally, a phototransistor has only two terminals led out—the emitter and the collector—while the base is not led out. The casing also has a window to allow light to enter. To increase light exposure, the base region area is made very large, and the emitter region is small, so incident light is mainly absorbed by the base region. During operation, the collector junction is reverse-biased, and the emitter junction is forward-biased. In the absence of light, the current flowing through the tube is the dark current Iceo = (1 + β) Icbo (very small), which is even smaller than the penetration current of general transistors; when there is light illumination, a large number of electron-hole pairs are excited, causing the current generated at the base Ib to increase. At this moment, the current flowing through the tube is called photocurrent, and the emitter current Ie = (10 + β) Ib. It can be seen that phototransistors have higher sensitivity than photodiodes.

Weidou Intelligent Technology specializes in selling German NEUTRIK connectors, NEUTRIK switches, NEUTRIK relays, NEUTRIK controllers, NEUTRIK plugs, NEUTRIK sensors, NEUTRIK resistors, NEUTRIK capacitors, NEUTRIK buses, NEUTRIK modules, NEUTRIK cables, NEUTRIK power supplies, NEUTRIK interfaces, NEUTRIK gateways, NEUTRIK circuit breakers, NEUTRIK original imports from Germany. Welcome customers to inquire and order.