NGELEKTRO electrical components Germany NGELEKTRO model NGELEKTRO price

NGELEKTRO electrical components are active-matrix liquid crystal displays driven by thin-film transistors. They primarily use current to stimulate liquid crystal molecules to generate points, lines, and planes, which combine with backlight tubes to form an image. IPS, TFT, and SLCD are all subclasses of LCD. Their working principle is that, under the action of an electric field, the alignment direction of liquid crystal molecules changes, altering the transmittance (modulation) of external light sources to complete electro-optical conversion. Then, using different excitations of the R, G, and B primary color signals through red, green, and blue primary color filter films, color reproduction in the time and spatial domains is completed.

NGELEKTRO electrical component types

Common thermocouples can be divided into two major categories: standard thermocouples and non-standard thermocouples. Standard thermocouples refer to those for which national standards specify the relationship between thermoelectric potential and temperature, permissible errors, and have a unified standard indexing table; they have matching display instruments available for selection. Non-standardized thermocouples are inferior to standardized thermocouples in terms of usage range or magnitude, generally lack a unified indexing table, and are mainly used for measurements in certain special occasions. Theoretically, any two different conductors (or semiconductors) can be configured as a thermocouple, but as practical temperature-measuring elements, they are subject to multiple requirements. To ensure reliability in engineering technology and sufficient measurement accuracy, not all materials can form thermocouples. The basic requirements for thermocouple electrode materials are generally: 1, stable thermoelectric properties within the temperature measurement range, not changing over time, sufficient physical and chemical stability, and resistance to oxidation or corrosion; 2, small resistance temperature coefficient, high conductivity, and low specific heat; 3, large thermoelectric potential generated during temperature measurement, with a linear or near-linear single-valued functional relationship between thermoelectric potential and temperature; 4, good material reproducibility, high mechanical strength, simple manufacturing process, and low cost.

NGELEKTRO electrical component principle

In information technology, digital integrated circuits are the main players, processing information carried by digital signals, where digital signals take discrete values in terms of time and magnitude. However, signals in nature change continuously in time and magnitude, such as wind sound and water flow; such signals are called analog signals. Correspondingly, circuits that process analog signals are called analog circuits, and integrated circuits used to process analog signals are called analog integrated circuits. Obviously, digital circuits cannot directly interface with the natural world. Merely for the convenience of processing or transmission, and to fully utilize the advantages of digital systems, analog signals are first converted into digital signals, input into modern digital systems with large capacity, high speed, strong anti-interference ability, and good confidentiality for processing, and then reconverted into analog signals for output. The main component of integrated circuits is the transistor, and analog integrated circuits are no exception; they utilize the amplification effect of transistors, whereas digital integrated circuits utilize the switching effect of transistors. Early analog integrated circuits mostly used bipolar transistors. Due to the maturity of CMOS technology, the disadvantage of slow speed in early CMOS circuits was overcome, and it offers the advantages of low power consumption and convenient process upgrades (CMOS scaling). Today, analog integrated circuits and mixed-signal integrated circuits (integrating digital and analog circuits) are also commonly designed and implemented using CMOS.

NGELEKTRO electrical component characteristics

(1) Volt-ampere characteristics: When a forward voltage is applied to a diode, if the voltage value is small, the current is extremely small; when the voltage exceeds a certain value, the current begins to increase exponentially. This is usually called the turn-on voltage of the diode, and the diode is in a fully conducting state; this voltage is usually called the conduction voltage of the diode. For germanium diodes, when a reverse voltage is applied to the diode, if the voltage value is small, the current is extremely small, and its value is the reverse saturation current. When the reverse voltage exceeds a certain value, the current begins to increase sharply, which is called reverse breakdown, and this voltage is called the reverse breakdown voltage of the diode. The breakdown voltage values of different diode models vary greatly, from tens of volts to thousands of volts. (2) Forward characteristics: When a forward voltage is applied, in the initial part of the forward characteristics, the forward voltage is very small and insufficient to overcome the blocking effect of the electric field within the PN junction, so the forward current is almost zero. This section is called the dead zone. The forward voltage that cannot make the diode conduct is called the dead zone voltage. When the forward voltage is greater than the dead zone voltage, the electric field within the PN junction is overcome, the diode conducts in the forward direction, and the current rises rapidly as the voltage increases. Within the normal operating current range, the terminal voltage of the diode during conduction remains almost constant; this voltage is called the forward voltage of the diode. When the forward voltage across the diode exceeds a certain value, the internal electric field is quickly weakened, the characteristic current grows rapidly, and the diode conducts in the forward direction; this is called the threshold voltage or cut-in voltage. (3) Reverse characteristics: When the applied reverse voltage does not exceed a certain range, the current flowing through the diode is the reverse current formed by the drift motion of minority carriers. Since the reverse current is very small, the diode is in the cutoff state. This reverse current is also called reverse saturation current or leakage current, and the reverse saturation current of the diode is greatly affected by temperature. Generally, the reverse current of silicon tubes is much smaller than that of germanium tubes; the reverse saturation current of low-power silicon tubes is in the order of nA, and that of low-power germanium tubes is in the order of μA. When the temperature rises, the semiconductor is heated and excited, the number of minority carriers increases, and the reverse saturation current also increases. (4) Breakdown characteristics: When the applied reverse voltage exceeds a certain value, the reverse current will suddenly increase; this phenomenon is called electrical breakdown. The critical voltage causing electrical breakdown is called the diode reverse breakdown voltage. During electrical breakdown, the diode loses its unidirectional conductivity. If the diode does not overheat due to electrical breakdown, the unidirectional conductivity is not necessarily permanently destroyed; after removing the applied voltage, its performance can still recover; otherwise, the diode is damaged. Therefore, excessive reverse voltage applied to the diode should be avoided during use. Reverse breakdown is divided into two types based on mechanism: Zener breakdown and avalanche breakdown. In cases of high doping concentration, because the barrier region width is very small, when the reverse voltage is large, the covalent bond structure within the barrier region is destroyed, causing valence electrons to break free from covalent bonds, generating electron-hole pairs, which causes the current to increase sharply; this breakdown is called Zener breakdown. If the doping concentration is lower, the barrier region width is wider, and Zener breakdown is not easily produced. Another type of breakdown is avalanche breakdown. When the reverse voltage increases to a large value, the external electric field accelerates the electron drift speed, causing collisions with valence electrons in covalent bonds, knocking valence electrons out of covalent bonds and generating new electron-hole pairs. The newly generated electron-hole pairs are accelerated by the electric field and knock out other valence electrons, causing an avalanche-like increase in carriers, which causes the current to increase sharply; this breakdown is called avalanche breakdown. Regardless of the type of breakdown, if the current is not limited, it may cause permanent damage to the PN junction. (5) Reverse current: Reverse current refers to the current flowing through the diode when it is at room temperature and under the maximum reverse voltage. The smaller the reverse current, the better the unidirectional conductivity of the tube. It is worth noting that reverse current is closely related to temperature; the reverse current doubles. Therefore, silicon diodes have better stability at high temperatures than germanium diodes. (6) Dynamic resistance: The ratio of the change in voltage to the corresponding change in current near the static operating point of the diode characteristic curve. (7) Voltage temperature coefficient: The voltage temperature coefficient refers to the relative change in stable voltage for every one degree Celsius increase in temperature. (8) Maximum operating frequency: The maximum operating frequency is the upper limit frequency for diode operation. Since the diode, like the PN junction, has junction capacitance composed of barrier capacitance, the value of the maximum operating frequency mainly depends on the size of the PN junction capacitance. If this value is exceeded, the unidirectional conductivity will be affected. (9) Maximum rectified current: The maximum rectified current refers to the maximum allowable forward average current value when the diode operates continuously for a long period. Its value is related to the PN junction area and external heat dissipation conditions. Because current passing through the tube causes the core to heat up and the temperature to rise, if the temperature exceeds the allowable limit, the core will overheat and be damaged. Therefore, under specified heat dissipation conditions, the diode should not exceed the maximum rectified current value during use.(10) Maximum reverse working voltage: When the reverse voltage applied across the diode reaches a certain high value, the tube will break down and lose its unidirectional conductivity. To ensure safe use, the maximum reverse working voltage value is specified.

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