ridi-leuchten electrical components Germany ridi-leuchten model ridi-leuchten price

ridi-leuchten electrical components are pyroelectric infrared sensors, which are devices composed of thermocouples. They are widely used as temperature detection devices in fields such as ear thermometers, radiation thermometers, electric ovens, and food temperature detection. The entry details the basic unit of a thermopile—the thermocouple; and provides a detailed introduction to the structure, working principle, main parameters, and applications of thermopiles.

ridi-leuchten electrical component types

For different application scenarios, the purpose of applying varistors and the voltage/current acting on the varistor are not the same, so the requirements for varistors also differ. Paying attention to these differences is very important for correct use. According to different purposes, varistors can be divided into two categories: (1) protection varistors and (2) circuit function varistors. Protection resistors: (1) Distinguish between varistors for power supply protection and varistors for signal line and data line protection, as they must meet different technical standard requirements. (2) According to the different continuous operating voltages applied to the varistor, varistors across power lines can be divided into AC type or DC type; the aging characteristics of varistors under these two voltage stresses are different. (3) According to the different abnormal overvoltage characteristics withstand by varistors, varistors can be divided into three types: surge suppression type, high power type, and high energy type. 1. Surge suppression type varistors refer to varistors used to suppress transient overvoltages such as lightning overvoltage and switching overvoltage. The occurrence of this transient overvoltage is random and non-periodic, and the peak current and voltage may be very high. The vast majority of varistors belong to this category. 2. High power type varistors refer to varistors used to absorb continuous pulse groups that appear periodically, such as varistors connected in parallel to switching power supply converters. Here, the impact voltage appears periodically, and the period is known. The energy value can generally be calculated. The peak voltage is not large, but due to the high frequency of occurrence, the average power is quite large. 11. High energy type varistors refer to varistors used to absorb magnetic energy in large inductive coils such as generator excitation coils and lifting electromagnet coils. For such applications, the main technical indicator is energy absorption capacity. The protective function of varistors can be repeated many times in most application scenarios, but sometimes they are made into "one-time" protective devices like current fuses. For example, varistors with short-circuit contacts connected in parallel to the loads of certain current transformers.

ridi-leuchten electrical component characteristics

The static characteristics of a sensor refer to the relationship between the output and input of the sensor for static input signals. Since the input and output are independent of time at this point, their relationship, i.e., the static characteristics of the sensor, can be described by an algebraic equation without time variables, or by a characteristic curve drawn with the input as the abscissa and the corresponding output as the ordinate. The main parameters characterizing the static characteristics of a sensor include: linearity, sensitivity, hysteresis, repeatability, drift, etc. (1) Linearity: Refers to the degree to which the actual relationship curve between the sensor output and input deviates from the fitted straight line. It is defined as the ratio of the maximum deviation between the actual characteristic curve and the fitted straight line within the full scale range to the full scale output value. (2) Sensitivity: Sensitivity is an important indicator of the static characteristics of a sensor. It is defined as the ratio of the increment of the output to the corresponding increment of the input that causes this increment. Use S to represent sensitivity. (3) Hysteresis: Hysteresis is the phenomenon where the input-output characteristic curves do not coincide when the sensor input changes from small to large (forward stroke) and from large to small (reverse stroke). For the same magnitude of input signal, the output signals of the sensor's forward and reverse strokes are not equal; this difference is called the hysteresis difference. (4) Repeatability: Repeatability refers to the degree of inconsistency in the characteristic curves obtained when the sensor input changes continuously multiple times over the full scale in the same direction. (5) Drift: Sensor drift refers to the phenomenon where the sensor output changes over time while the input remains constant. There are two reasons for drift: one is the sensor's own structural parameters; the other is the surrounding environment (such as temperature, humidity, etc.). (6) Resolution: When the sensor input increases slowly from a non-zero value, an observable change in output occurs after exceeding a certain increment. This input increment is called the sensor's resolution, i.e., the minimum input increment. (7) Threshold: When the sensor input increases slowly from zero, an observable change in output occurs after reaching a certain value. This input value is called the sensor's threshold voltage.

ridi-leuchten electrical component characteristics

(1) Volt-ampere characteristics: When a forward voltage is applied to a diode, the current is extremely small when the voltage value is low; when the voltage exceeds a certain value, the current begins to increase exponentially. This is usually called the diode's turn-on voltage, and the diode is in a fully conductive state. This voltage is usually called the diode's conduction voltage. For germanium diodes, when a reverse voltage is applied to the diode, the current is extremely small when the voltage value is low, and its current value is the reverse saturation current. When the reverse voltage exceeds a certain value, the current increases sharply, which is called reverse breakdown, and this voltage is called the diode's reverse breakdown voltage. The breakdown voltage values of different diode models vary greatly, from tens of volts to thousands of volts. (2) Forward characteristics: When a forward voltage is applied, in the initial part of the forward characteristics, the forward voltage is very small and insufficient to overcome the blocking effect of the electric field within the PN junction. The forward current is almost zero, and this section is called the dead zone. This forward voltage that cannot make the diode conduct is called the dead zone voltage. When the forward voltage is greater than the dead zone voltage, the electric field within the PN junction is overcome, and the diode conducts forward. The current rises rapidly as the voltage increases. Within the normal operating current range, the terminal voltage of the diode during conduction remains almost constant. This voltage is called the diode's forward voltage. When the forward voltage across the diode exceeds a certain value, the internal electric field is quickly weakened, the characteristic current grows rapidly, and the diode conducts forward. This is called the threshold voltage or cut-in voltage. (3) Reverse characteristics: When the applied reverse voltage does not exceed a certain range, the current through the diode is the reverse current formed by the drift motion of minority carriers. Since the reverse current is very small, the diode is in the cutoff state. This reverse current is also called the reverse saturation current or leakage current. The reverse saturation current of a diode is greatly affected by temperature. Generally, the reverse current of silicon tubes is much smaller than that of germanium tubes. The reverse saturation current of low-power silicon tubes is in the order of nA, and that of low-power germanium tubes is in the order of μA. When the temperature rises, the semiconductor is heated and excited, the number of minority carriers increases, and the reverse saturation current also increases. (4) Breakdown characteristics: When the applied reverse voltage exceeds a certain value, the reverse current suddenly increases. This phenomenon is called electrical breakdown. The critical voltage causing electrical breakdown is called the diode reverse breakdown voltage. During electrical breakdown, the diode loses its unidirectional conductivity. If the diode does not overheat due to electrical breakdown, the unidirectional conductivity is not necessarily permanently destroyed. After removing the applied voltage, its performance can still recover; otherwise, the diode is damaged. Therefore, excessive reverse voltage applied to the diode should be avoided during use. Reverse breakdown is divided into Zener breakdown and avalanche breakdown according to the mechanism. In the case of high doping concentration, because the width of the barrier region is very small, a large reverse voltage destroys the covalent bond structure within the barrier region, causing valence electrons to break free from covalent bonds and generate electron-hole pairs, resulting in a sharp increase in current. This breakdown is called Zener breakdown. If the doping concentration is low, the barrier region is wider, and Zener breakdown is not easy to occur. Another type of breakdown is avalanche breakdown. When the reverse voltage increases to a large value, the external electric field accelerates the electron drift speed, causing collisions with valence electrons in covalent bonds, knocking valence electrons out of covalent bonds and generating new electron-hole pairs. The newly generated electron-hole pairs are accelerated by the electric field and knock out other valence electrons, causing an avalanche-like increase in carriers and a sharp increase in current. This breakdown is called avalanche breakdown. Regardless of the type of breakdown, if the current is not limited, it may cause permanent damage to the PN junction. (5) Reverse current: Reverse current refers to the current flowing through the diode when it is subjected to ambient temperature and the maximum reverse voltage. The smaller the reverse current, the better the unidirectional conductivity of the tube. It is worth noting that reverse current is closely related to temperature; the reverse current doubles. Therefore, silicon diodes have better stability at high temperatures than germanium diodes. (6) Dynamic resistance: The ratio of the change in voltage to the corresponding change in current near the static operating point of the diode characteristic curve. (7) Voltage temperature coefficient: The voltage temperature coefficient refers to the relative change in stable voltage for every one degree Celsius increase in temperature. (8) Maximum operating frequency: The maximum operating frequency is the upper limit frequency for diode operation. Since the diode, like the PN junction, has a junction capacitance composed of barrier capacitance, the value of the maximum operating frequency mainly depends on the size of the PN junction capacitance. If this value is exceeded, the unidirectional conductivity will be affected. (9) Maximum rectified current: The maximum rectified current refers to the maximum allowable forward average current value when the diode operates continuously for a long period. Its value is related to the PN junction area and external heat dissipation conditions. Because current passing through the tube causes the core to heat up and the temperature to rise, if the temperature exceeds the allowable limit, the core will overheat and be damaged. Therefore, under specified heat dissipation conditions, the diode should not exceed its maximum rectified current value during use.(10) Maximum reverse working voltage: When the reverse voltage applied across the diode reaches a certain high value, the tube will break down and lose its unidirectional conductivity. To ensure safe use, the maximum reverse working voltage value is specified.

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