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robert bosch electrical components are tools for accurately determining and measuring temperature, categorized into dial thermometers and digital thermometers. Depending on the temperature-sensing substance and measurement range, types include kerosene thermometers, alcohol thermometers, mercury thermometers, gas thermometers, resistance thermometers, thermocouple thermometers, radiation thermometers, optical pyrometers, and bimetallic thermometers. Digital thermometers accurately determine and measure temperature, displaying results numerically rather than via a pointer or mercury column; hence they are called digital thermometers or digital temperature gauges.

robert bosch electrical component types

For different application scenarios, the purpose of using varistors varies, and the voltage/current applied to the varistor differs; therefore, requirements for varistors also differ. Distinguishing these differences is crucial for correct usage. Based on the application purpose, varistors can be classified into two main categories: (1) protection varistors and (2) circuit function varistors. Protection resistors: (1) Distinguish between varistors for power supply protection and those for signal/data line protection, as they must meet different technical standards. (2) Based on the continuous operating voltage applied to the varistor, varistors across power lines can be classified into AC type or DC type; aging characteristics under these two voltage stresses differ. (3) Based on the abnormal overvoltage characteristics withstandable by the varistor, varistors can be classified into surge suppression type, high-power type, and high-energy type. 1. Surge suppression varistors are used to suppress transient overvoltages such as lightning overvoltages and switching overvoltages. These transient overvoltages occur randomly and non-periodically, and peak current/voltage values can be very high. The vast majority of varistors fall into this category. 2. High-power varistors are used to absorb periodic continuous pulse groups, such as varistors connected in parallel with switched-mode power supply converters. Here, impulse voltages occur periodically with a known period, and energy values can generally be calculated. Although peak voltage is not high, the average power is considerable due to the high frequency of occurrence. 5. High-energy varistors refer to varistors used to absorb magnetic energy from large inductive coils such as generator excitation coils and lifting electromagnet coils. For such applications, the main technical indicator is energy absorption capacity. The protective function of varistors allows for repeated operation in most application scenarios, but they are sometimes designed as "one-time" protective devices similar to current fuses, such as varistors with short-circuit contacts connected in parallel to certain current transformer loads.

robert bosch electrical component structure

The rated current of the fuse element is not equal to the rated current of the fuse. The rated current of the fuse element is selected based on the load current of the protected equipment, while the rated current of the fuse should be greater than that of the fuse element and determined in coordination with the main electrical appliance. A fuse mainly consists of 9 parts: the fuse element, housing, and support. The fuse element is the key component controlling fusing characteristics. The material, dimensions, and shape of the fuse element determine its fusing characteristics. Fuse element materials are divided into low-melting-point and high-melting-point types. Low-melting-point materials, such as lead and lead alloys, have low melting points and fuse easily. Due to their higher resistivity, they require larger cross-sectional dimensions, producing more metal vapor during fusing, making them suitable only for fuses with low breaking capacity. High-melting-point materials, such as copper and silver, have high melting points and do not fuse easily. However, due to their lower resistivity, they can be made with smaller cross-sectional dimensions than low-melting-point elements, producing less metal vapor during fusing, making them suitable for fuses with high breaking capacity. Fuse element shapes are divided into wire-type and strip-type. Changing the shape of the variable cross-section significantly alters the fusing characteristics of the fuse. Fuses have various fusing characteristic curves, suitable for the needs of different types of protected objects.

robert bosch electrical component structure

A bipolar transistor consists of three differently doped semiconductor regions: the emitter region, base region, and collector region. In an NPN type transistor, these regions are N-type, P-type, and N-type semiconductors, respectively, whereas in an PNP type transistor, they are P-type, N-type, and P-type semiconductors, respectively. Each semiconductor region has a terminal lead, typically denoted by the letters E, B, and C for the emitter, base, and collector, respectively. The base is physically located between the emitter and collector and is made of lightly doped, high-resistivity material. The collector surrounds the base region. Since the collector junction is reverse-biased, it is difficult for electrons to be injected from here into the base region, resulting in a common-base current gain of approximately 11, while the common-emitter current gain achieves a relatively large value. From the simplified cross-sectional diagram of a typical NPN type bipolar transistor on the right, it can be seen that the area of the collector junction is larger than that of the emitter junction. Additionally, the emitter has a relatively high doping concentration. Under normal circumstances, the several regions of a bipolar transistor are asymmetric in physical properties and geometric dimensions. Assuming the transistor connected in the circuit is in the forward active region, swapping the connections of the collector and emitter in the circuit will cause the transistor to leave the forward active region and enter the reverse active region. The internal structure of the transistor determines its suitability for operation in the forward active region; therefore, the common-base and common-emitter current gains in the reverse active region are much smaller than when the transistor is in the forward active region. This functional asymmetry fundamentally stems from the different doping levels of the emitter and collector. Therefore, in an NPN type transistor, although both the collector and emitter are N-type doped, their electrical properties and functions are completely non-interchangeable. The emitter region has the highest doping concentration, followed by the collector region, while the base region has the lowest doping concentration. Additionally, the physical dimensions of the three regions differ; the base region is very thin, and the collector area is larger than the emitter area. Due to this material structure of the bipolar transistor, a reverse bias can be provided to the collector junction, provided that this reverse bias is not excessive enough to damage the transistor. The purpose of heavy doping of the emitter is to increase the efficiency of electron injection from the emitter into the base region, thereby achieving the highest possible current gain. In the common-emitter configuration of a bipolar transistor, small changes in the voltage applied across the base and emitter terminals cause significant changes in the current between the emitter and collector. Utilizing this property allows for the amplification of input current or voltage. Treating the base of the bipolar transistor as the input terminal and the collector as the output terminal allows analysis of this two-port network using Thévenin's theorem. Using equivalent principles, the bipolar transistor can be viewed as a voltage-controlled current source or as a current-controlled voltage source. Furthermore, looking into the left side of the two-port network, the input impedance at the base is reduced to the base resistance, thus lowering the loading requirement on the preceding stage circuit.

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