Rohde & Schwarz electrical components German Rohde & Schwarz models Rohde & Schwarz prices

Rohde & Schwarz electrical components are energy conversion devices that convert sound signals into electrical signals. Categories include moving-coil, condenser, electret, and the recently emerging silicon microphones, as well as liquid microphones and laser microphones. Most microphones are electret condenser microphones, which operate using a polymer diaphragm with permanently isolated charge.

Rohde & Schwarz electrical components composition

A diode is formed by a PN junction plus corresponding electrode leads and tube casing encapsulation. Using different doping processes, through diffusion, P-type semiconductor and N-type semiconductor are fabricated on the same semiconductor (usually silicon or germanium) substrate, forming a space charge region at their interface called the PN junction. The electrode led out from the P region is called the anode, and the electrode led out from the N region is called the cathode. Due to the unidirectional conductivity of the PN junction, when the diode is conducting, the current flows from the anode through the interior of the tube to the cathode. A diode has two electrodes; the electrode led out from the P region is the positive pole, also called the anode; the electrode led out from the N region is the negative pole, also called the cathode.

Rohde & Schwarz electrical components performance

The main performance indicators of loudspeakers include: sensitivity, frequency response, rated power, rated impedance, directivity, and distortion. (1) Rated power: Loudspeaker power is divided into nominal power and maximum power. Nominal power is also called rated power or non-distortion power. It refers to the maximum input power allowed within the rated non-distortion range of the loudspeaker; the power marked on the loudspeaker's label and technical manual is this value. Maximum power refers to the peak power that the loudspeaker can withstand at a certain instant. (2) Rated impedance: The impedance of a loudspeaker is generally related to frequency. (3) Frequency response: When audio signals of the same voltage but different frequencies are applied to a loudspeaker, the resulting sound pressure will change. Generally, the sound pressure produced at mid-frequencies is higher, while it is lower at low and high frequencies. The frequency range of high and low tones when the sound pressure drops to a certain value of the mid-frequency is called the frequency response characteristic of the loudspeaker. (4) Distortion: The phenomenon where a loudspeaker cannot faithfully reproduce the original sound is called distortion. There are two types of distortion: frequency distortion and nonlinear distortion. Frequency distortion is caused by stronger amplification of signals at certain frequencies and weaker amplification at others, destroying the original proportion of high and low loudness and changing the original timbre. Nonlinear distortion is caused by the vibration of the loudspeaker's vibration system not being completely consistent with the signal fluctuation, adding new frequency components to the output sound waves. (5) Directivity characteristic: Used to characterize the sound pressure distribution radiated by the loudspeaker in various spatial directions; the higher the frequency, the narrower the directivity, and the larger the cone, the stronger the directivity.

Rohde & Schwarz electrical components structure

Commonly used is the unidirectional thyristor, also known as the ordinary thyristor. It is composed of four layers of semiconductor materials, has three PN junctions, and three external electrodes: the electrode led out from the first layer of P-type semiconductor is called the anode A, the electrode led out from the third layer of P-type semiconductor is called the control gate G, and the electrode led out from the fourth layer of N-type semiconductor is called the cathode K. As seen from the circuit symbol of the thyristor, like a diode, it is a unidirectional conductive device, but with the addition of a control gate G, it has operating characteristics completely different from those of a diode. The P1N1P2N2 four-layer three-terminal device based on silicon monocrystal is internationally known as the silicon crystal thyristor, abbreviated as thyristor T, because its characteristics are similar to those of vacuum thyratrons. Also, because thyristors were initially used in static rectification, they are also called silicon controlled rectifiers, abbreviated as SCR SCR. In terms of performance, SCR not only has unidirectional conductivity but also possesses controllability more valuable than silicon rectifier elements (commonly known as "dead silicon"). It has only two states: conduction and cutoff. SCR can control high-power electromechanical equipment with milliampere-level current. If this power is exceeded, due to a significant increase in component switching losses, the allowable average current decreases, and the nominal current should be derated. SCR has many advantages, such as controlling high power with low power, with power amplification factors reaching hundreds of thousands of times; extremely fast response, turning on and off within microseconds; contactless operation, no sparks, no noise; high efficiency, low cost, etc. Weaknesses of SCR: poor static and dynamic overload capacity; prone to mis-triggering due to interference. SCRs are mainly classified by appearance into: bolt type, flat plate type, and flat bottom type. Structure of SCR components. Regardless of the shape of the SCR, their cores are composed of a four-layer P1N1P2N2 structure made of P-type silicon and N-type silicon. It has three PN junctions (J1, J2, J3). The anode A is led out from the P1 layer of the J1 structure, the cathode K is led out from the N2 layer, and the control gate G is led out from the P11 layer, so it is a four-layer three-terminal semiconductor device.

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