stabo electrical components Germany stabo model stabo price

stabo electrical components is a general term for all single components based on semiconductor materials, including diodes, transistors, field-effect transistors, and thyristors (the latter three are all three-terminal devices) made of various semiconductor materials. A transistor is a semiconductor device commonly used in amplifiers or electronically controlled switches. Transistors are the basic building blocks for the standard operation of computers, mobile phones, and all other modern electronic circuits. Due to their fast response speed and high accuracy, transistors can be used for a wide variety of digital and analog functions, including amplification, switching, voltage regulation, signal modulation, and oscillators. Transistors can be packaged individually or as part of an integrated circuit in a very small area that can accommodate one hundred million or more transistors.

stabo electrical component classification

(1) Full-availability link system. If any service device (trunk line or key) in the link system can be used by any traffic source in the group of traffic sources it serves, such a link system is called a full-availability link system. (2) Partial-availability link system. If any traffic source in the traffic source group can only use part of the service devices in the link system, such a link system is called a partial-availability link system. Partial-availability link systems divide the traffic source group into several subgroups, performing graded multiple interconnection between the outlets of the traffic groups. This structure can be described by the example shown in the figure below.

stabo electrical component principle

A crystal diode consists of a p-n junction formed by p-type semiconductor and n-type semiconductor. A space charge layer is formed on both sides of the interface, and a built-in electric field is established. When no external voltage is applied, the diffusion current caused by the carrier concentration difference across the p-n junction and the drift current caused by the built-in electric field are equal, resulting in an electrical equilibrium state. When a forward voltage bias is applied externally, the mutual cancellation effect of the external electric field and the built-in electric field increases the diffusion current of carriers, causing a forward current. When a reverse voltage bias is applied externally, the external electric field and the built-in electric field are further strengthened, forming a reverse saturation current within a certain reverse voltage range that is independent of the reverse bias voltage value. When the applied reverse voltage reaches a certain level, the electric field strength in the space charge layer of the p-n junction reaches a critical value, causing a carrier multiplication process. This generates a large number of electron-hole pairs, resulting in a significant reverse breakdown current, known as the diode breakdown phenomenon.

stabo electrical component structure

The structure and materials of new high-voltage Schottky diodes differ from those of traditional Schottky diodes. Traditional Schottky diodes are formed by metal-semiconductor contact. Metals such as aluminum, gold, molybdenum, nickel, and titanium can be used, while the semiconductor is typically silicon or gallium arsenide. Since electrons have higher mobility than holes, N-type semiconductor material is selected as the substrate to achieve good frequency characteristics. To reduce the junction capacitance of the Schottky diode and increase the reverse breakdown voltage without making the series resistance too large, a high-resistance N- thin layer is usually epitaxially grown on an N+ substrate. As is well known, there are a large number of conductive electrons inside a metal conductor. When metal contacts semiconductor (with a distance on the order of atomic size), the Fermi level of the metal is lower than that of the semiconductor. At the energy levels corresponding to the conduction band of the semiconductor inside the metal, the electron density is lower than the electron density in the conduction band of the semiconductor. Therefore, after contact, electrons diffuse from the semiconductor to the metal, causing the metal to become negatively charged and the semiconductor positively charged. Since metal is an ideal conductor, the negative charge is distributed only within a thin layer on the surface with atomic-scale thickness. For N-type semiconductors, the donor impurity atoms that lose electrons become positive ions and are distributed over a larger thickness. The result of electron diffusion from the semiconductor to the metal forms a space charge region, a built-in electric field, and a potential barrier, with the depletion layer existing only on the N-type semiconductor side (the entire barrier region falls on the semiconductor side). The direction of the built-in electric field in the barrier region is from the N-type region to the metal. As thermionic emission increases the built-in field, the drift current opposite to the diffusion current increases, finally reaching dynamic equilibrium and forming a contact potential barrier between the metal and the semiconductor, known as the Schottky barrier. When the external voltage is zero, the electron diffusion current equals the reverse drift current, achieving dynamic equilibrium. When a forward bias is applied (i.e., positive voltage to the metal and negative voltage to the semiconductor), the built-in field is weakened, the potential barrier on the semiconductor side is lowered, and a forward current flows from the metal to the semiconductor. When a reverse bias is applied, the built-in field is strengthened, the potential barrier height increases, and a small reverse current flows from the semiconductor to the metal. Therefore, SBD, like a PN junction diode, is a nonlinear device with unidirectional conductivity.

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