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sytronic electrical components are sensor resistors whose resistance changes with temperature. According to different temperature coefficients, they are divided into positive temperature coefficient thermistors and negative temperature coefficient thermistors. The resistance of a positive temperature coefficient thermistor increases as the temperature rises, while the resistance of a negative temperature coefficient thermistor decreases as the temperature rises; both belong to semiconductor devices.

sytronic electrical component classification

Fiber optic connectors can be divided into common single-mode and multi-mode connectors for silica-based optical fibers based on different transmission media, as well as other fiber optic connectors using plastic etc. as transmission media. Based on the structural form of the connector, they can be divided into: FC, SC, ST, LC, D11, DIN, MU, MT, and various other forms. Among them, ST connectors are typically used at the cabling equipment end, such as fiber patch panels and fiber modules; while SC and MT connectors are typically used at the network equipment end. Based on the shape of the fiber end face, they are classified into FC, PC (including SPC or UPC), and APC; based on the number of fiber cores, there is a distinction between single-core and multi-core (such as MT-RJ). Fiber optic connectors are widely used and come in many varieties. In practical applications, we generally distinguish them based on the different structures of the fiber optic connectors.

sytronic electrical component characteristics

(1) Volt-ampere characteristics: When a forward voltage is applied to a diode, the current is extremely small when the voltage value is low; when the voltage exceeds a certain value, the current begins to increase exponentially, which is usually called the turn-on voltage of the diode. The diode is in a fully conductive state, and this voltage is usually called the conduction voltage of the diode. For germanium diodes, when a reverse voltage is applied to the diode, the current is extremely small when the voltage value is low, and its current value is the reverse saturation current. When the reverse voltage exceeds a certain value, the current increases sharply, which is called reverse breakdown, and this voltage is called the reverse breakdown voltage of the diode. The breakdown voltage values of different diode models vary greatly, from tens of volts to thousands of volts. (2) Forward characteristics: When a forward voltage is applied, in the initial part of the forward characteristics, the forward voltage is very small and insufficient to overcome the blocking effect of the electric field within the PN junction, so the forward current is almost zero. This section is called the dead zone. This forward voltage that cannot make the diode conduct is called the dead zone voltage. When the forward voltage is greater than the dead zone voltage, the electric field within the PN junction is overcome, the diode conducts in the forward direction, and the current rises rapidly as the voltage increases. Within the normal operating current range, the terminal voltage of the diode during conduction remains almost constant; this voltage is called the forward voltage of the diode. When the forward voltage across the diode exceeds a certain value, the internal electric field is quickly weakened, the characteristic current grows rapidly, and the diode conducts in the forward direction. This is called the threshold voltage or cut-in voltage. (3) Reverse characteristics: When the applied reverse voltage does not exceed a certain range, the current passing through the diode is the reverse current formed by the drift motion of minority carriers. Since the reverse current is very small, the diode is in the cutoff state. This reverse current is also called reverse saturation current or leakage current. The reverse saturation current of a diode is greatly affected by temperature. Generally, the reverse current of silicon tubes is much smaller than that of germanium tubes. The reverse saturation current of low-power silicon tubes is in the order of nA, and that of low-power germanium tubes is in the order of μA. When the temperature rises, the semiconductor is heated and excited, the number of minority carriers increases, and the reverse saturation current also increases. (4) Breakdown characteristics: When the applied reverse voltage exceeds a certain value, the reverse current will suddenly increase. This phenomenon is called electrical breakdown. The critical voltage causing electrical breakdown is called the diode reverse breakdown voltage. During electrical breakdown, the diode loses its unidirectional conductivity. If the diode does not overheat due to electrical breakdown, the unidirectional conductivity will not necessarily be permanently destroyed. After removing the applied voltage, its performance can still recover; otherwise, the diode will be damaged. Therefore, excessive reverse voltage applied to the diode should be avoided during use. Reverse breakdown is divided into two types based on mechanism: Zener breakdown and avalanche breakdown. In the case of high doping concentration, because the width of the barrier region is very small, a large reverse voltage destroys the covalent bond structure within the barrier region, causing valence electrons to break free from covalent bonds and generate electron-hole pairs, resulting in a sharp increase in current. This type of breakdown is called Zener breakdown. If the doping concentration is lower and the barrier region is wider, Zener breakdown is less likely to occur. Another type of breakdown is avalanche breakdown. When the reverse voltage increases to a large value, the external electric field accelerates the drift speed of electrons, causing them to collide with valence electrons in covalent bonds, knocking valence electrons out of covalent bonds and generating new electron-hole pairs. The newly generated electron-hole pairs are accelerated by the electric field and knock out other valence electrons, causing an avalanche-like increase in carriers and a sharp increase in current. This type of breakdown is called avalanche breakdown. Regardless of the type of breakdown, if the current is not limited, it may cause permanent damage to the PN junction. (5) Reverse current: Reverse current refers to the current flowing through the diode when it is at room temperature and under the maximum reverse voltage. The smaller the reverse current, the better the unidirectional conductivity of the tube. It is worth noting that reverse current is closely related to temperature; the reverse current doubles. Therefore, silicon diodes have better stability at high temperatures than germanium diodes. (6) Dynamic resistance: The ratio of the change in voltage to the corresponding change in current near the static operating point of the diode characteristic curve. (7) Voltage temperature coefficient: The voltage temperature coefficient refers to the relative change in stable voltage for every one degree Celsius increase in temperature. (8) Maximum operating frequency: The maximum operating frequency is the upper limit frequency for diode operation. Since the diode, like the PN junction, has a junction capacitance composed of barrier capacitance, the value of the maximum operating frequency mainly depends on the size of the PN junction capacitance. If this value is exceeded, the unidirectional conductivity will be affected. (9) Maximum rectified current: The maximum rectified current refers to the maximum allowable average forward current when the diode operates continuously for a long period. Its value is related to the PN junction area and external heat dissipation conditions. Because current passing through the tube causes the core to heat up and the temperature to rise, exceeding the permissible limit will cause the core to overheat and become damaged. Therefore, under specified heat dissipation conditions, the diode should not exceed its maximum rectified current value during use.(10) Maximum reverse working voltage: When the reverse voltage applied across the diode reaches a certain value, the tube will break down and lose its unidirectional conductivity. To ensure safe operation, the maximum reverse working voltage value is specified.

sytronic electrical component structure

1. LCD panel: The LCD panel includes polarizing film, glass substrate, black matrix, color filter, protective film, common electrode, alignment layer, liquid crystal layer (liquid crystal, spacers, sealant), capacitor, display electrode, prism layer, and diffuser layer. Polarizing film, also known as polarizer, is divided into upper polarizer and lower polarizer. The polarization functions of the upper and lower polarizers are perpendicular to each other. They act like a fence, blocking light wave components as required, for example, blocking light wave components perpendicular to the polarizer fence and only allowing light wave components parallel to the fence to pass through. 2. Glass substrate: In liquid crystal displays, glass substrates can be divided into upper and lower substrates. Their main function is to hold the liquid crystal material in the space between the two substrates. The material for glass substrates is generally alkali-free borosilicate glass with excellent mechanical properties, heat resistance, and chemical corrosion resistance. For TFT-LCD, one layer of glass substrate is distributed with TFT, while the other layer of glass substrate is deposited with color filters. 3. Black matrix: The black matrix uses materials with high light-shielding performance to separate the red, green, and blue primary colors in the color filter (to prevent color mixing) and prevent light leakage, thereby helping to improve the contrast of each color block. In addition, in TFT-LCD, the black matrix can also conceal internal electrode wiring or thin-film transistors. Color filters, also known as color filter membranes, function to produce 3 primary colors of light: red, green, and blue, achieving full-color display for liquid crystal displays. 4. Alignment film: The alignment film, also known as the orientation film or alignment layer, functions to allow liquid crystal molecules to achieve uniform arrangement and orientation at the microscopic level. 5. Transparent electrode: Transparent electrodes are divided into common electrodes and pixel electrodes. The input signal voltage is applied between the pixel electrode and the common electrode. Transparent electrodes are usually formed by depositing indium tin oxide (ITO) material on the glass substrate to create a transparent conductive layer. 6. Liquid crystal material: Liquid crystal material acts like a light valve in LCD, controlling the brightness of transmitted light to achieve information display. 7. Driver IC: Driver IC is essentially a set of integrated circuit chip devices used to adjust and control the phase, peak value, frequency, etc., of potential signals on the transparent electrodes, establishing a driving electric field to ultimately realize information display on the liquid crystal. In liquid crystal panels, active matrix liquid crystal displays are constructed by sealing twisted nematic (TN) liquid crystal material between two glass substrates. Among them, the upper glass substrate close to the display screen is deposited with red, green, and blue (RGB) tricolor color filters (also known as color filter membranes), black matrix, and common transparent electrodes. The lower glass substrate (the substrate farther from the display screen) is equipped with thin-film transistor (TFT) devices, transparent pixel electrodes, storage capacitors, gate lines, signal lines, etc. Alignment films (or alignment layers) are prepared on the inner sides of the two glass substrates to orient the liquid crystal molecules. Liquid crystal material is injected between the two glass substrates, and spacers are distributed to ensure uniform gap thickness. The periphery is bonded with frame glue to provide sealing; the common electrodes of the upper and lower glass substrates are connected using silver dot paste technology. Polarizers (or polarizing films) are attached to the outer sides of the upper and lower glass substrates, respectively. When a voltage is applied between the pixel transparent electrode and the common transparent electrode, the arrangement state of the liquid crystal molecules changes. At this time, the intensity of incident light passing through the liquid crystal also changes. Liquid crystal displays utilize the optical rotation property of liquid crystal materials combined with electric field control to achieve information display. 8. Backlight module: LCD products are non-emissive electronic devices that do not have inherent light-emitting properties. They rely on light emission from the source in the backlight module to achieve display performance. Therefore, the brightness of LCD is determined by its backlight module. Thus, the performance of the backlight module directly affects the display quality of the liquid crystal panel. The backlight module includes illumination light sources, reflectors, light guide plates, diffusion sheets, brightness enhancement films (prism sheets), and frames. Backlight modules used in LCD can be mainly divided into two categories: edge-lit backlight modules and direct-lit backlight modules. Mobile phones, laptops, and monitors (15 inches) mainly use edge-lit backlight modules, while LCD TVs mostly use direct-lit backlight module light sources. Backlight module light sources mainly use cold cathode fluorescent lamps and light-emitting diodes as the backlights for LCD. 9. Reflector: The reflector, also known as the reflector hood, mainly functions to direct all light emitted by the light source into the light guide plate, minimizing useless loss as much as possible. 1. Light guide plate: The main function of the light guide plate is to guide light emitted from side light sources to the front of the panel. 11. Zero lens: Prism sheets, also known as brightness enhancement films, mainly function to concentrate scattered light through refraction and total reflection within the film layer, emitting it from the backlight source at a specific angle to achieve a screen brightening display effect.16. Diffusion sheet: The main function of the diffusion sheet is to correct the edge-lit light from the backlight module into a uniform surface light source to achieve optical diffusion. Diffusion sheets are divided into upper diffusion sheets and lower diffusion sheets. The upper diffusion sheet is located between the prism sheet and the liquid crystal assembly, closer to the display panel. The lower diffusion sheet is located between the light guide plate and the prism sheet, closer to the backlight source.

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