THORMAS electrical components Germany THORMAS model THORMAS price

THORMAS electrical components refer to devices such as lightning arrestor tubes or antenna switch tubes used for overvoltage protection, which contain two or more electrodes filled with a certain amount of inert gas. A gas discharge tube is a gap-type lightning protection component used in the lightning protection of communication systems. Gas discharge tubes have been widely applied in the lightning protection of communication systems. Discharge tubes are commonly used in the first or first two stages of multi-stage protection circuits to discharge instantaneous lightning overcurrents and limit overvoltages. Due to the high inter-electrode insulation resistance and low parasitic capacitance of discharge tubes, they offer clear advantages for lightning protection of high-frequency signal lines. The main drawbacks of the protective characteristics of discharge tubes lie in their relatively large discharge delay and less-than-ideal operating sensitivity, making it difficult to effectively suppress lightning waves with steep wavefront rise times, and there is a follow-current issue in the lightning protection of power systems. Commonly used gas discharge tubes include two-electrode and three-electrode discharge tubes, whose enclosure materials are mostly ceramic, hence they are called ceramic discharge tubes.

THORMAS electrical component characteristics

Sensitivity refers to the ratio of the change in output to the change in input of a sensor under steady-state operating conditions. It is the slope of the output-input characteristic curve. If the relationship between the sensor's output and input is linear, then the sensitivity S is a constant. Otherwise, it will vary with changes in the input quantity. The dimension of sensitivity is the ratio of the dimensions of the output and input quantities. When the dimensions of the sensor's output and input quantities are the same, sensitivity can be understood as the amplification factor. Increasing sensitivity can yield higher measurement accuracy. However, the higher the sensitivity, the narrower the measurement range, and stability is often poorer.

THORMAS electrical component structure

A bipolar junction transistor is made by fabricating two closely spaced PN junctions on a single semiconductor substrate. These two PN junctions divide the entire semiconductor into three parts: the middle part is the base region, and the two side parts are the emitter region and the collector region. There are two arrangement types: PNP and NPN. Corresponding electrodes are led out from the three regions, namely the base b, emitter e, and collector c. The PN junction between the emitter region and the base region is called the emitter junction, and the PN junction between the collector region and the base region is called the collector junction. The base region is very thin, while the emitter region is thicker with a high impurity concentration. In PNP type transistors, the emitter region "emits" holes, whose movement direction is consistent with the current direction, so the emitter arrow points inward; in NPN type transistors, the emitter region "emits" free electrons, whose movement direction is opposite to the current direction, so the emitter arrow points outward. The direction of the emitter arrow also indicates the conduction direction of the PN junction under forward voltage. Both silicon and germanium bipolar junction transistors come in PNP and NPN types. Transistor packaging forms and pin identification: Common transistor packaging forms fall into two major categories: metal packaging and plastic packaging. The pin arrangement follows certain rules. When placed in a bottom-view position such that the three pins form the vertices of an isosceles triangle, from left to right they are e b c; for small and medium-power plastic transistors, orient the flat side towards yourself with the three pins facing downward, then from left to right they are e b c.

THORMAS electrical component classification

a. By material: silicon tubes, germanium tubes. b. By structure: NPN, PNP. c. By function: switching tubes, power tubes, Darlington tubes, photosensitive tubes, etc. d. By power: low-power tubes, medium-power tubes, high-power tubes. e. By operating frequency: low-frequency tubes, high-frequency tubes, ultra-high-frequency tubes. f. By structural process: alloy tubes, planar tubes. g. By mounting method: through-hole transistors, surface-mount transistors.

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