TRANSFOSMARY electrical components Germany TRANSFOSMARY model TRANSFOSMARY price

TRANSFOSMARY electrical components are electronic devices with conductivity between that of good conductors and insulators, utilizing the special electrical properties of semiconductor materials to perform specific functions. They can be used to generate, control, receive, transform, and amplify signals, as well as perform energy conversion. The semiconductor materials in semiconductor devices are silicon, germanium, or gallium arsenide, which can be used as rectifiers, oscillators, light emitters, amplifiers, photodetectors, and other equipment. To distinguish them from integrated circuits, they are sometimes referred to as discrete devices. The basic structure of most two-terminal devices (i.e., crystal diodes) is a PN junction. Semiconductor devices typically use different semiconductor materials, processes, and geometric structures, resulting in a wide variety of crystal diodes with diverse functions and applications. The frequency coverage of crystal diodes ranges from low frequency, high frequency, microwave, millimeter wave, infrared, to light waves. Three-terminal devices are generally active devices, with typical representatives being various transistors (also known as crystal triodes). Transistors can be divided into bipolar junction transistors and field-effect transistors. Depending on the application, transistors can be classified into power transistors, microwave transistors, and low-noise transistors. In addition to general-purpose transistors used for amplification, oscillation, and switching, there are transistors for special purposes, such as phototransistors, magnetically sensitive transistors, and field-effect sensors. These devices can convert information about environmental factors into electrical signals and also provide amplification like general transistors to obtain larger output signals. Furthermore, there are other special devices, such as unijunction transistors that can generate sawtooth waves, thyristors that can be used in various high-current control circuits, and charge-coupled devices that can be used as imaging devices or information storage devices. In military equipment such as communication and radar systems, weak signals are mainly received by highly sensitive, low-noise semiconductor receiving devices. With the rapid development of microwave communication technology, low-noise microwave semiconductor devices have developed rapidly, with increasing operating frequencies and decreasing noise figures. Due to their excellent performance, small size, light weight, and low power consumption, microwave semiconductor devices have been widely applied in air defense and anti-missile systems, electronic warfare systems, and other applications.

TRANSFOSMARY electrical component parameters

The main parameters of potentiometers include nominal resistance, rated power, resolution, sliding noise, resistance variation characteristic, wear resistance, zero-position resistance, and temperature coefficient. 1. Rated power: The maximum power allowed to be dissipated across the two fixed terminals of a potentiometer is its rated power. Note that the rated power is not equal to the power between the center tap and a fixed terminal. The rated power of a potentiometer refers to the maximum power allowed to be consumed under long-term continuous load at the specified rated temperature, when the atmospheric pressure is 87~107kPa. 2. Nominal resistance: The nominal resistance marked on the product, with series similar to those of resistors. 3. Tolerance class: The error range between the measured resistance and the nominal resistance allows for errors of 20%, 10%, 5%, 2%, 1% depending on the precision class. The precision of precision potentiometers can reach 0.1%. 12. Resistance variation law: Refers to the relationship between resistance and the rotation angle (or sliding travel) of the wiper contact. This relationship can take any functional form, commonly linear, logarithmic, and reverse logarithmic (exponential). In use, linear potentiometers are suitable as voltage dividers; reverse logarithmic (exponential) potentiometers are suitable as volume controls in radios, recorders, phonographs, and televisions. If a replacement of the same type is not available during maintenance, a linear type can be used as a substitute, but a logarithmic type is not recommended. Logarithmic potentiometers are only suitable for tone control, etc.

TRANSFOSMARY electrical component principle

An NPN type bipolar transistor can be viewed as two diodes connected together with a common anode. In the normal operating state of a bipolar transistor, the base-emitter junction is forward-biased, while the base-collector junction is reverse-biased. Without external voltage, the electron concentration in the N region of the emitter junction is greater than that in the P region, causing some electrons to diffuse into the P region. Similarly, some holes in the P region will diffuse into the N region. Thus, a space charge region forms at the emitter junction, generating an internal electric field directed from the N region to the P region. This field hinders further diffusion, achieving dynamic equilibrium. When a forward voltage is applied to the emitter junction, the dynamic equilibrium between carrier diffusion and the internal electric field in the depletion layer is broken, injecting thermally excited electrons into the base region. In an NPN type transistor, the base region is P type doped, where holes are the majority carriers, so electrons in this region are called "minority carriers." Electrons injected from the emitter into the base region partly recombine with the majority carrier holes there. On the other hand, due to the low doping level and thin physical dimensions of the base region, and because the collector junction is reverse-biased, most electrons reach the collector region via drift motion, forming the collector current. To minimize recombination before electrons reach the collector junction, the base region must be made sufficiently thin so that the carrier diffusion time is shorter than the lifetime of semiconductor minority carriers, and the base thickness must be much smaller than the electron diffusion length. In modern bipolar transistors, the typical base region thickness is a few tenths of a micrometer. Note that although both the collector and emitter are N type doped, their doping levels and physical properties differ, so a bipolar transistor must be distinguished from two diodes connected in series in opposite directions.

TRANSFOSMARY electrical component characteristics

The characteristics of an inductor are exactly opposite to those of a capacitor; it blocks alternating current (AC) while allowing direct current (DC) to pass smoothly. The resistance when a DC signal passes through the coil is simply the wire's own resistance, resulting in a very small voltage drop. When an AC signal passes through the coil, a self-induced electromotive force (EMF) is generated across the coil terminals. The direction of this self-induced EMF is opposite to that of the applied voltage, hindering the passage of AC. Therefore, the characteristic of an inductor is to pass DC and block AC; the higher the frequency, the greater the coil impedance. Inductors often work together with capacitors in circuits to form LC filters, LC oscillators, etc. Additionally, people utilize the properties of inductance to manufacture chokes, transformers, relays, and other devices. Passing DC: Refers to the inductor presenting a closed path to DC. If the resistance of the inductor coil is ignored, DC can pass through the inductor "unimpeded." For DC, the coil's own resistance offers very little hindrance, so it is often ignored in circuit analysis. Blocking AC: When AC passes through the inductor coil, the inductor impedes the AC. This impedance to AC is the inductive reactance of the coil.

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