TREMIS electrical components Germany TREMIS model TREMIS price

TREMIS electrical components are parts that connect the battery to external conductors. In electrical engineering, terminals mostly refer to wiring ends, also called terminal blocks. Types include single-hole, double-hole, socket, hook, etc. By material, they are classified as silver-plated copper, zinc-plated copper, copper, aluminum, iron, etc. Their main function is to transmit electrical signals or conduct electricity. In engineering, it is the interface reserved by pre-station works for post-station works, and is the embedded facility for post-station interface works. When observing objects with a terminal cross-section inspection microscope, it can produce an upright three-dimensional spatial image with strong stereoscopic effect, clear and wide imaging, and has a long working distance; equipped with a high-precision harness terminal image measurement and analysis system, combined into a harness terminal inspection microscope, the perfect combination of high-quality optical systems and high-resolution cameras makes cross-sectional images clearer, and unique fixed magnification levels make measurements more precise. To detect whether the terminal crimping is good, professional testing equipment is required. Commonly used terminal testing equipment includes: terminal cross-section analyzer

TREMIS electrical component principle

A Schottky diode is a metal-semiconductor device made using noble metals (gold, silver, aluminum, platinum, etc.) A as the anode and N-type semiconductor B as the cathode, utilizing the rectifying characteristics of the barrier formed at their contact surface. Because there are a large number of electrons in the N-type semiconductor and only a very small number of free electrons in the noble metal, electrons diffuse from the high-concentration B to the low-concentration A. Obviously, there are no holes in the metal A, so there is no diffusion movement of holes from A to B. As electrons continuously diffuse from B to A, the electron concentration on the surface of B gradually decreases, destroying surface electrical neutrality, thus forming a barrier whose electric field direction is B → A. However, under the action of this electric field, electrons in A also produce a drift motion from A → B, thereby weakening the electric field formed by the diffusion motion. After a space charge region of a certain width is established, the electron drift motion caused by the electric field and the electron diffusion motion caused by the concentration difference reach a relative balance, forming the Schottky barrier. The internal circuit structure of a typical Schottky rectifier uses N-type semiconductor as the substrate, on which an N-epitaxial layer doped with arsenic is formed. The anode uses materials such as molybdenum or aluminum to form a barrier layer. Silicon dioxide is used to eliminate the electric field in the edge region, increasing the voltage resistance of the tube. The N-type substrate has a very small on-state resistance, and its doping concentration is 110% times higher than that of the H-layer. An N+ cathode layer is formed under the substrate to reduce the contact resistance of the cathode. By adjusting structural parameters, a Schottky barrier is formed between the N-type substrate and the anode metal.

TREMIS electrical component principle

Like ordinary diodes, light-emitting diodes are composed of a PN junction and also have unidirectional conductivity. When a forward voltage is applied to the light-emitting diode, holes injected from the P region into the N region and electrons injected from the N region into the P region recombine with electrons in the N region and holes in the P region respectively within a few micrometers near the PN junction, producing spontaneous radiation fluorescence. The energy states of electrons and holes differ in different semiconductor materials. The amount of energy released when electrons and holes recombine varies; the more energy released, the shorter the wavelength of the emitted light. Commonly used are diodes emitting red, green, or yellow light. The reverse breakdown voltage of light-emitting diodes is greater than 5 volts. Its forward volt-ampere characteristic curve is very steep, so a current-limiting resistor must be connected in series during use to control the current through the diode. The core part of the light-emitting diode is a chip composed of P-type semiconductor and N-type semiconductor, with a transition layer between the P-type semiconductor and N-type semiconductor called the PN junction. In the PN junction of certain semiconductor materials, when injected minority carriers recombine with majority carriers, excess energy is released in the form of light, thereby directly converting electrical energy into light energy. When a reverse voltage is applied to the PN junction, minority carriers are difficult to inject, so it does not emit light. When it is in forward operating state (i.e., forward voltage is applied across both ends), current flows from the LED anode to the cathode, and the semiconductor crystal emits light of different colors from ultraviolet to infrared; the intensity of the light is related to the current.

TREMIS electrical component principle

1. Emission region emits electrons to the base region: Power supply Ub is applied to the emitter junction through resistor Rb, the emitter junction is forward-biased, and the majority carriers (free electrons) in the emission region continuously cross the emitter junction into the base region, forming emitter current Ie. At the same time, majority carriers in the base region also diffuse to the emission region, but since the majority carrier concentration is far lower than the carrier concentration in the emission region, this current can be ignored, so it can be considered that the emitter junction is mainly an electron flow. 2. Diffusion and recombination of electrons in the base region: After electrons enter the base region, they first concentrate near the emitter junction, gradually forming an electron concentration difference. Under the action of this concentration difference, the electron flow is promoted to diffuse towards the collector junction in the base region, and is pulled into the collector region by the collector junction electric field to form collector current Ic. A very small portion of electrons (because the base region is very thin) recombine with holes in the base region; the ratio of the diffused electron flow to the recombined electron flow determines the amplification capability of the transistor. 9. Collector region collects electrons: Since a large reverse voltage is externally applied to the collector junction, the electric field force generated by this reverse voltage prevents electrons in the collector region from diffusing to the base region, while simultaneously pulling electrons diffused near the collector junction into the collector region, thereby forming the main collector current Icn. In addition, minority carriers (holes) in the collector region also produce drift motion, flowing to the base region to form reverse saturation current, represented by Icbo, which has a very small value but is extremely sensitive to temperature.

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