TUNGSRAM electrical components Germany TUNGSRAM model TUNGSRAM price

TUNGSRAM electrical components are constituent parts of electronic components and small electrical machines and instruments. They often consist of several parts and are interchangeable within similar products. The term commonly refers to certain parts in the electrical, radio, and instrumentation industries. In practice, electronic components is a collective term for both components and devices.

TUNGSRAM electrical component principle

It is a contactless switching device with relay characteristics that uses semiconductor devices to replace traditional electrical contacts as the switching mechanism. A single-phase solid-state relay is a four-terminal active device, with two input control terminals and two output terminals. The input and output are optically isolated. When a DC or pulse signal is applied to the input terminal and reaches a certain current value, the output terminal switches from the off state to the on state. AC solid-state relays are classified by switching method into zero-crossing turn-on type and random turn-on type. By output switching element, they are classified into triac output type and anti-parallel SCR type. By installation method, they are classified into pin-type for printed circuit boards and chassis-mounted type fixed on metal baseplates. Solid-state relays can be divided into zero-voltage type and phase-control type based on the triggering mode.

TUNGSRAM electrical component parameters

(1) Nominal capacitance is the capacitance value marked on the capacitor. However, there is a deviation between the actual capacitance and the nominal capacitance. The accuracy class corresponds to the permissible error. General capacitors commonly use classes I, II, and III, while electrolytic capacitors use classes IV, V, and VI to indicate capacitance tolerance, selected according to the application. The capacitance value of an electrolytic capacitor depends on the impedance presented during operation under AC voltage. The capacitance value varies with changes in operating frequency, temperature, voltage, and measurement method. The unit of capacitance is F (farad). Since a capacitor is a "container" for storing electric charge, the issue of "capacity" size arises. To measure the ability of a capacitor to store electric charge, the physical quantity of capacitance is defined. A capacitor can only store electric charge under the action of an applied voltage. Different capacitors may store different amounts of charge under voltage. Internationally, it is uniformly stipulated that when a DC voltage of 1 volts is applied to a capacitor, the amount of charge it can store is defined as the capacitance of that capacitor (i.e., the charge per unit voltage), represented by the letter C. The basic unit of capacitance is the farad (F). (2) Rated voltage is the maximum DC voltage that can be continuously applied to the capacitor at the minimum and rated ambient temperatures. If the operating voltage exceeds the withstand voltage of the capacitor, the capacitor will break down and be damaged. In practice, as the temperature rises, the withstand voltage decreases. (3) Insulation resistance. When DC voltage is applied to a capacitor, leakage current is generated. The ratio of the two is called insulation resistance. For small capacitors, the value mainly depends on the surface condition of the capacitor. Generally, the higher the insulation resistance, the better. (4) Loss. The energy consumed due to heating per unit time under the action of an electric field is called loss. Loss is related to frequency range, dielectric material, conductivity, and the resistance of the metallic parts of the capacitor. (15) Frequency characteristics. As frequency increases, the capacitance of general capacitors tends to decrease. When a capacitor operates below its resonant frequency, it exhibits capacitive behavior; when it exceeds its resonant frequency, it exhibits inductive behavior, acting not as a capacitor but as an inductor. Therefore, it is essential to avoid operating capacitors above their resonant frequency.

TUNGSRAM electrical component principle

Bipolar junction transistors are classified into two types by material: germanium transistors and silicon transistors. Each type has two structural forms: NPN and PNP. However, the most commonly used are silicon NPN and germanium PNP transistors. (Here, N stands for negative; N-type semiconductors are formed by adding phosphorus to high-purity silicon to replace some silicon atoms, generating free electrons for conduction under voltage stimulation. P stands for positive, meaning boron is added to replace silicon, creating a large number of holes to facilitate conduction.) Apart from the difference in power supply polarity, their working principles are identical. The following introduces the current amplification principle of NPN silicon transistors. An NPN transistor consists of 4 pieces of N-type semiconductor sandwiching one piece of P-type semiconductor. The PN junction formed between the emitter region and the base region is called the emitter junction, and the PN junction formed between the collector region and the base region is called the collector junction. The three leads are called the emitter e, base b, and collector c. When the potential at point b is a few tenths of a volt higher than the potential at point e, the emitter junction is forward-biased. When the potential at point C is a few volts higher than the potential at point b, the collector junction is reverse-biased. The collector power supply Ec must be higher than the base power supply Eb. During transistor manufacturing, the majority carrier concentration in the emitter region is intentionally made higher than that in the base region. Meanwhile, the base region is made very thin, and impurity content is strictly controlled. Thus, once power is applied, due to the forward bias of the emitter junction, the majority carriers in the emitter region (electrons) and the majority carriers in the base region (holes) easily diffuse across the emitter junction toward each other. However, since the former concentration is much greater than the latter, the current through the emitter junction is basically an electron flow, known as the emitter electron current.

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