weydemeyer electrical components Germany weydemeyer model weydemeyer price

weydemeyer electrical components are electronic devices with conductivity between that of good conductors and insulators, utilizing the special electrical properties of semiconductor materials to perform specific functions. They can be used to generate, control, receive, transform, and amplify signals, as well as perform energy conversion. The semiconductor materials for semiconductor devices are silicon, germanium, or gallium arsenide, which can be used as rectifiers, oscillators, light emitters, amplifiers, photodetectors, and other equipment. To distinguish them from integrated circuits, they are sometimes referred to as discrete devices. The basic structure of most two-terminal devices (i.e., crystal diodes) is a PN junction. Semiconductor devices typically use different semiconductor materials, processes, and geometric structures. A wide variety of crystal diodes with diverse functions and applications have been developed. The frequency coverage of crystal diodes ranges from low frequency, high frequency, microwave, millimeter wave, and infrared to light waves. Three-terminal devices are generally active devices, with typical representatives being various transistors (also known as crystal triodes). Transistors can be divided into bipolar junction transistors and field-effect transistors. Depending on the application, transistors can be classified into power transistors, microwave transistors, and low-noise transistors. In addition to general-purpose transistors used for amplification, oscillation, and switching, there are transistors for special purposes, such as phototransistors, magnetosensitive transistors, and field-effect sensors. These devices can convert information about environmental factors into electrical signals and also provide amplification like general transistors to obtain larger output signals. Furthermore, there are some special devices, such as unijunction transistors that can be used to generate sawtooth waves, thyristors that can be used in various high-current control circuits, and charge-coupled devices that can be used as imaging devices or information storage devices. In military equipment such as communication and radar systems, weak signals are mainly received by highly sensitive, low-noise semiconductor receiving devices. With the rapid development of microwave communication technology, low-noise microwave semiconductor devices have developed rapidly, with increasing operating frequencies and decreasing noise figures. Due to their excellent performance, small size, light weight, and low power consumption, microwave semiconductor devices have been widely used in air defense and anti-missile systems, electronic warfare systems, and other applications.

weydemeyer electrical component characteristics

(1) Volt-ampere characteristics: When a forward voltage is applied to a diode, the current is extremely small when the voltage value is low. When the voltage exceeds a certain value, the current begins to increase exponentially. This is usually called the turn-on voltage of the diode. When the diode is in a fully conducting state, this voltage is usually called the conduction voltage of the diode. For germanium diodes, when a reverse voltage is applied to the diode, the current is extremely small when the voltage value is low, and its current value is the reverse saturation current. When the reverse voltage exceeds a certain value, the current increases sharply, which is called reverse breakdown, and this voltage is called the reverse breakdown voltage of the diode. The breakdown voltage values of different diode models vary greatly, ranging from tens of volts to thousands of volts. (2) Forward characteristics: When a forward voltage is applied, in the initial part of the forward characteristic, the forward voltage is very small and insufficient to overcome the blocking effect of the electric field within the PN junction, so the forward current is almost zero. This region is called the dead zone. The forward voltage that cannot make the diode conduct is called the dead zone voltage. When the forward voltage is greater than the dead zone voltage, the electric field within the PN junction is overcome, and the diode conducts in the forward direction, with the current rising rapidly as the voltage increases. Within the normal operating current range, the terminal voltage of the diode during conduction remains almost constant; this voltage is called the forward voltage of the diode. When the forward voltage across the diode exceeds a certain value, the internal electric field is quickly weakened, the characteristic current grows rapidly, and the diode conducts in the forward direction. This is called the threshold voltage or cut-in voltage. (3) Reverse characteristics: When the applied reverse voltage does not exceed a certain range, the current flowing through the diode is the reverse current formed by the drift motion of minority carriers. Since the reverse current is very small, the diode is in the cutoff state. This reverse current is also called the reverse saturation current or leakage current. The reverse saturation current of a diode is greatly affected by temperature. Generally, the reverse current of silicon tubes is much smaller than that of germanium tubes. The reverse saturation current of low-power silicon tubes is in the order of nA, while that of low-power germanium tubes is in the order of μA. When the temperature rises, the semiconductor is thermally excited, the number of minority carriers increases, and the reverse saturation current also increases. (4) Breakdown characteristics: When the applied reverse voltage exceeds a certain value, the reverse current suddenly increases. This phenomenon is called electrical breakdown. The critical voltage causing electrical breakdown is called the reverse breakdown voltage of the diode. During electrical breakdown, the diode loses its unidirectional conductivity. If the diode does not overheat due to electrical breakdown, the unidirectional conductivity is not necessarily permanently destroyed. After removing the applied voltage, its performance can still recover; otherwise, the diode is damaged. Therefore, excessive reverse voltage applied to the diode should be avoided during use. Reverse breakdown is divided into Zener breakdown and avalanche breakdown based on the mechanism. In cases of high doping concentration, because the width of the barrier region is very small, a large reverse voltage destroys the covalent bond structure within the barrier region, causing valence electrons to break free from covalent bonds and generate electron-hole pairs, resulting in a sharp increase in current. This type of breakdown is called Zener breakdown. If the doping concentration is low and the barrier region is wide, Zener breakdown is not easily produced. Another type of breakdown is avalanche breakdown. When the reverse voltage increases to a large value, the external electric field accelerates the drift speed of electrons, causing them to collide with valence electrons in covalent bonds, knocking valence electrons out of covalent bonds and generating new electron-hole pairs. The newly generated electron-hole pairs are accelerated by the electric field and knock out other valence electrons, causing an avalanche-like increase in carriers and a sharp increase in current. This type of breakdown is called avalanche breakdown. Regardless of the type of breakdown, if the current is not limited, it may cause permanent damage to the PN junction. (5) Reverse current: Reverse current refers to the current flowing through the diode when it is subjected to ambient temperature and the maximum reverse voltage. The smaller the reverse current, the better the unidirectional conductivity of the tube. It is worth noting that reverse current is closely related to temperature; the reverse current doubles. Therefore, silicon diodes have better stability at high temperatures than germanium diodes. (6) Dynamic resistance: The ratio of the change in voltage to the corresponding change in current near the static operating point of the diode characteristic curve. (7) Voltage temperature coefficient: The voltage temperature coefficient refers to the relative change in stable voltage for every one degree Celsius increase in temperature. (8) Maximum operating frequency: The maximum operating frequency is the upper limit frequency for diode operation. Since the diode, like the PN junction, has a junction capacitance composed of barrier capacitance, the value of the maximum operating frequency mainly depends on the size of the PN junction capacitance. If this value is exceeded, the unidirectional conductivity will be affected. (9) Maximum rectified current: The maximum rectified current refers to the maximum allowable forward average current value when the diode operates continuously for a long period. Its value is related to the PN junction area and external heat dissipation conditions. Because current passing through the tube causes the chip to heat up and the temperature to rise, exceeding the permissible limit will cause the chip to overheat and become damaged. Therefore, under specified heat dissipation conditions, the diode should not exceed the maximum rectified current value during use.(10) Maximum reverse working voltage: When the reverse voltage applied across the diode reaches a certain high value, the tube will break down and lose its unidirectional conductivity. To ensure safe operation, the maximum reverse working voltage value is specified.

weydemeyer electrical component types

1. Classification by mounting type: As thermocouples are the primary temperature sensing element and are widely used, there are various requirements for their mounting devices and technical performance. Therefore, thermocouple mounting devices are divided into six types: without mounting device, threaded type, fixed flange type, movable flange type, movable flange with angle scale form, and tapered protection tube type. 3. Classification by assembly and structural configuration: According to the performance and structural configuration, thermocouples can be classified into detachable thermocouples, explosion-proof thermocouples, mineral-insulated (armored) thermocouples, and spring-loaded fixed thermocouples for special applications.

weydemeyer electrical component applications

Thermistors can also be used as electronic circuit components for temperature compensation in instrument circuits and cold junction temperature compensation for thermocouples. Utilizing the self-heating characteristics of NTC thermistors enables automatic gain control, forming RC oscillator amplitude stabilization circuits, delay circuits, and protection circuits. When the self-heating temperature is much higher than the ambient temperature, the resistance is also related to the heat dissipation conditions of the environment. Therefore, this characteristic of thermistors is often utilized in flow meters, flowmeters, gas analyzers, and thermal conductivity analysis to create specialized detection elements. PTC thermistors are mainly used for overheat protection of electrical equipment, contactless relays, constant temperature control, automatic gain control, motor starting, time delay, automatic degaussing of color TVs, fire alarms, and temperature compensation. Main disadvantages: (1) The relationship between resistance and temperature is severely nonlinear; (2) Poor consistency and interchangeability of components; (3) Components are prone to aging and have poor stability; (4) Except for special high-temperature thermistors, most thermistors are only suitable for the range of 0～159℃, which must be noted during use.

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