xELEMATIC electrical components Germany xELEMATIC model xELEMATIC price

xELEMATIC electrical components are a common light-emitting device that emits light by releasing energy through the recombination of electrons and holes, and they are widely used in the lighting field. Light-emitting diodes can efficiently convert electrical energy into light energy and have extensive applications in modern society, such as in lighting, flat-panel displays, and medical devices. This electronic component appeared as early as 1962, initially only emitting low-intensity red light. Later, versions emitting other monochromatic lights were developed, with emitted light covering the visible spectrum, infrared, and ultraviolet ranges, and luminous intensity significantly increased. Its applications also evolved from initial use as indicator lights and display panels; light-emitting diodes are abbreviated as LED. They are made from compounds containing gallium, arsenic, phosphorus, nitrogen, etc. When electrons and holes recombine, they emit visible light, allowing them to be used to manufacture light-emitting diodes. In circuits and instruments, they serve as indicator lights or form character and numeric displays. Gallium arsenide diodes emit red light, gallium phosphide diodes emit green light, silicon carbide diodes emit yellow light, and gallium nitride diodes emit blue light. Based on chemical properties, they are divided into organic light-emitting diodes (OLED) and inorganic light-emitting diodes (LED). LED was initially used for indicative lighting in instruments and meters, later expanding to traffic signals, landscape lighting, automotive lighting, and mobile phone keypads and backlights. Later, new technology for micro-light-emitting diodes (micro-LED) was developed, which significantly reduces the size of traditional light-emitting diodes. Arrays of independently emitting red, blue, and green micro-LEDs are formed for display technology applications. Micro-LEDs feature self-emissive display characteristics, offering higher efficiency, longer lifespan, and greater stability against environmental influences compared to self-emissive organic light-emitting diodes.

xELEMATIC electrical component classification

Based on structural differences, they are classified into full-availability trunks, partial-availability trunks, and link systems; based on service methods, they are classified into loss-system trunks and waiting-system trunks (see random service systems); based on the number of traffic sources served, they are classified into infinite-source trunks and finite-source trunks. In telecommunication systems, equipment directly used for communication between users is mostly an infinite-source loss-system full-availability link system, while equipment used to control the connection process of communication devices is mostly an infinite-source waiting-system full-availability system. When the number of traffic sources is not large relative to the trunk capacity, a finite-source full-availability system or partial-availability system is generally adopted. Based on the call behavior of traffic sources, i.e., whether users make new call attempts after a failed call, trunks can be divided into repeated-call systems and non-repeated-call systems. Actual communication systems involve repeated calls, making non-repeated-call systems an approximation of repeated-call systems. (1) Full-availability trunk: If any service device (trunk line or selector) in the trunk can be used by any traffic source in the group it serves, such a trunk is called a full-availability trunk. (2) Partial-availability trunk: If any traffic source in a group can only use part of the service devices in the trunk, such a trunk is called a partial-availability trunk. Partial-availability trunks divide traffic source groups into several subgroups, performing grading multiple connections between the outlets of the traffic groups. This structure can be described by the example shown in the figure below.

xELEMATIC electrical component characteristics

The most important characteristic of a diode is its unidirectional conductivity. In a circuit, current can only flow into the diode's anode and out of its cathode. 1. Forward characteristics: In an electronic circuit, when the diode's anode is connected to a high potential terminal and the cathode to a low potential terminal, the diode conducts. This connection method is called forward bias. It must be noted that when the forward voltage applied across the diode is very small, the diode still does not conduct, and the forward current flowing through it is extremely weak. Only when the forward voltage reaches a certain value can the diode truly conduct. After conduction, the voltage across the diode remains basically constant, known as the diode's "forward voltage drop". 10. Reverse characteristics In an electronic circuit, when the diode's anode is connected to a low potential terminal and the cathode to a high potential terminal, almost no current flows through the diode, placing it in a cutoff state. This connection method is called reverse bias. When a diode is reverse-biased, a weak reverse current, known as leakage current, still flows through it. When the reverse voltage across the diode increases to a certain value, the reverse current increases sharply, causing the diode to lose its unidirectional conductivity. This state is called diode breakdown. The injection current of a laser diode must exceed the critical current density to satisfy the population inversion condition and emit laser light. The critical current density is related to the junction temperature and indirectly affects efficiency. During high-temperature operation, the critical current increases, efficiency decreases, and components may even be damaged.

xELEMATIC electrical component characteristics

(1) Volt-ampere characteristics: When a forward voltage is applied to a diode, the current is extremely small at low voltage values; when the voltage exceeds a certain value, the current begins to increase exponentially. This is usually referred to as the diode's turn-on voltage, at which point the diode is in a fully conducting state, and this voltage is typically called the diode's conduction voltage. For germanium diodes, when a reverse voltage is applied, the current is extremely small at low voltage values, representing the reverse saturation current. When the reverse voltage exceeds a certain value, the current increases sharply, known as reverse breakdown, and this voltage is called the diode's reverse breakdown voltage. Breakdown voltage values vary significantly among different diode models, ranging from tens of volts to thousands of volts. (2) Forward characteristics: When an external forward voltage is applied, in the initial part of the forward characteristic curve, the forward voltage is too small to overcome the blocking effect of the electric field within the PN junction, resulting in nearly zero forward current. This region is called the dead zone. The forward voltage that cannot cause the diode to conduct is called the dead-zone voltage. When the forward voltage exceeds the dead-zone voltage, the electric field within the PN junction is overcome, and the diode conducts in the forward direction, with current rising rapidly as voltage increases. Within the normal operating current range, the terminal voltage of the conducting diode remains almost constant; this voltage is called the diode's forward voltage. When the forward voltage across the diode exceeds a certain value, the internal electric field is quickly weakened, and the characteristic current grows rapidly, causing the diode to conduct in the forward direction. This is called the threshold voltage or knee voltage. (3) Reverse characteristics: When the applied reverse voltage does not exceed a certain range, the current flowing through the diode is a reverse current formed by the drift motion of minority carriers. Since the reverse current is very small, the diode is in a cutoff state. This reverse current is also known as reverse saturation current or leakage current, and the diode's reverse saturation current is highly influenced by temperature. Generally, the reverse current of silicon tubes is much smaller than that of germanium tubes; the reverse saturation current of low-power silicon tubes is in the order of nA, while that of low-power germanium tubes is in the order of μA. As temperature rises, semiconductors are thermally excited, increasing the number of minority carriers, which in turn increases the reverse saturation current. (4) Breakdown characteristics: When the applied reverse voltage exceeds a certain value, the reverse current suddenly increases. This phenomenon is called electrical breakdown. The critical voltage causing electrical breakdown is called the diode's reverse breakdown voltage. During electrical breakdown, the diode loses its unidirectional conductivity. If the diode does not overheat due to electrical breakdown, its unidirectional conductivity may not be permanently destroyed, and its performance can recover after the external voltage is removed; otherwise, the diode will be damaged. Therefore, excessively high reverse voltages should be avoided during use. Reverse breakdown is mechanistically divided into Zener breakdown and avalanche breakdown. In cases of high doping concentration, the barrier region width is very small. At higher reverse voltages, the covalent bond structure within the barrier region is disrupted, freeing valence electrons from covalent bonds and generating electron-hole pairs, causing a sharp increase in current. This is called Zener breakdown. If the doping concentration is lower, the barrier region is wider, making Zener breakdown less likely. Another type of breakdown is avalanche breakdown. When the reverse voltage increases to a large value, the external electric field accelerates electron drift speed, causing collisions with valence electrons in covalent bonds. These collisions knock valence electrons out of covalent bonds, generating new electron-hole pairs. The newly generated electron-hole pairs are accelerated by the electric field and collide with other valence electrons, causing an avalanche-like increase in carriers and a sharp rise in current. This is called avalanche breakdown. Regardless of the breakdown type, if the current is not limited, it may cause permanent damage to the PN junction. (5) Reverse current: Reverse current refers to the current flowing through a diode under ambient temperature and maximum reverse voltage conditions. The smaller the reverse current, the better the diode's unidirectional conductivity performance. It is worth noting that reverse current is closely related to temperature; it doubles with temperature increase. Therefore, silicon diodes exhibit better stability at high temperatures than germanium diodes. (6) Dynamic resistance: The ratio of the change in voltage to the corresponding change in current near the static operating point on the diode's characteristic curve. (7) Voltage temperature coefficient: The voltage temperature coefficient refers to the relative change in stable voltage for every one-degree Celsius increase in temperature. (8) Maximum operating frequency: The maximum operating frequency is the upper frequency limit for diode operation. Like the PN junction, the diode's junction capacitance consists of barrier capacitance. Therefore, the maximum operating frequency mainly depends on the size of the PN junction capacitance. If this value is exceeded, unidirectional conductivity will be affected. (9) Maximum rectified current: Maximum rectified current refers to the maximum allowable average forward current when the diode operates continuously over a long period. Its value is related to the PN junction area and external heat dissipation conditions. Because current flow causes heating in the die, raising the temperature, exceeding the permissible limit will overheat and damage the die. Therefore, under specified heat dissipation conditions, the diode's maximum rectified current value should not be exceeded during use.(10) Maximum reverse working voltage: When the reverse voltage applied across the diode reaches a certain high value, the tube will break down and lose its unidirectional conductivity. To ensure safe operation, a maximum reverse working voltage value is specified.

Weidou Intelligent Technology specializes in selling German xELEMATIC connectors, xELEMATIC switches, xELEMATIC relays, xELEMATIC controllers, xELEMATIC plugs, xELEMATIC sensors, xELEMATIC resistors, xELEMATIC capacitors, xELEMATIC buses, xELEMATIC modules, xELEMATIC cables, xELEMATIC power supplies, xELEMATIC interfaces, xELEMATIC gateways, xELEMATIC circuit breakers, xELEMATIC original imports from Germany. We welcome inquiries and orders from users.